2N5086/2N5087/MMBT5087
2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier
• This device is designed for low level, high gain, low
noise general purpose amplifier applications at
collector currents to 50mA.
TO-92
1
1. Emitter 2. Base 3. Collector
3
2
SOT-23
1 Mark: 2Q
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
T
a
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current
Junction and Storage Temperature
- Continuous
Parameter
Value
-50
-50
-3.0
-100
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= -1.0mA, I
B
= 0
I
C
= -100µA, I
E
= 0
V
CB
= -10V, I
E
= 0
V
CB
= -35V, I
E
= 0
V
EB
= -3.0V, I
C
= 0
I
C
= -100µA, V
CE
= -5.0V
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -10mA, V
CE
= -5.0V
V
CE(sat)
V
BE(on)
f
T
C
cb
h
fe
NF
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Collector-Base Capacitance
Small-Signal Current Gain
Noise Figure
I
C
= -10mA, I
B
= -1.0mA
I
C
= -1.0mA, V
CE
= -5.0V
I
C
= -500µA, V
CE
= -5.0V, f = 20MHz
V
CB
= -5.0V, I
E
= 0, f = 100KHz
I
C
= -1.0mA, V
CE
= -5.0V,
f = 1.0KHz
I
C
= -100µA, V
CE
= -5.0V
R
S
= 3.0kΩ, f = 1.0KHz
I
C
= -20µA, V
CE
= -5.0V
R
S
= 10kΩ
f = 10Hz to 15.7KHz
* Pulse Test: Pulse Width
≤
300µs, Duty Cycle
≤
2.0%
Min.
-50
-50
Max.
Units
V
V
Off Characteristics
Collector-Emitter Breakdown Voltage *
V
(BR)CEO
V
(BR)CBO
I
CEO
I
CBO
h
FE
Collector-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
-10
-50
-50
5086
5087
5086
5087
5086
5087
150
250
150
250
150
250
500
800
nA
nA
nA
On Characteristics
-0.3
-0.85
40
4.0
5086
5087
5086
5087
5086
5087
150
250
600
900
3.0
2.0
3.0
2.0
V
V
MHz
pF
Small Signal Characteristics
dB
dB
dB
dB
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
2N5086/2N5087/MMBT5087
Thermal Characteristics
T
a
=25°C unless otherwise noted
Max.
Symbol
P
D
R
θJC
R
θJA
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N5086
2N5087
625
5.0
83.3
200
357
*MMBT5087
350
2.8
Units
mW
mW/°C
°C/W
°C/W
* Device mounted on FR-4 PCB 1.6”
×
1.6”
×
0.06."
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
2N5086/2N5087/MMBT5087
Typical Characteristics
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
F E
- TYPICAL PULSED CURRENT GAIN
β
0.3
0.25
0.2
0.15
350
V
CB
= 5V
β
β
β
300
250
200
150
100
125 °C
β
β
= 10
25 °C
25
°
C
0.1
0.05
0
0.1
125
°
C
- 40
°
C
- 40 °C
50
0.01 0.03
0.1
0.3
1
3
10
30
I
C
- COLLECTOR CURRENT (mA)
100
1
10
I
C
- COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1
0.8
- 40 °C
V
BEON
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTE R VOLTAGE (V)
1
0.8
- 40 °C
25 °C
125 °C
0.6
0.4
0.2
0
0.1
25 °C
125 °C
0.6
0.4
0.2
0
0.1
β
β
β
β
β
= 10
β
V
CE
= 5V
1
10
I
C
- COLLECTOR CURRENT (mA)
50
1
10
I
C
- COLLECTOR CURRE NT (mA)
25
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
I
CBO
- COLLECTOR CURRENT (nA)
100
V
CB
= 40V
20
f = 1 MHz
CAPACITANCE (pF)
16
12
8
C ibo
10
1
0.1
4
0
C obo
0.01
25
50
75
100
T
A
- AMBIENT TEMP ERATURE (
°
C)
125
0
4
8
12
16
REVERSE BIAS VOLTAGE (V)
20
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Figure 6. Input and Output Capacitance
vs Reverse Voltag
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
2N5086/2N5087/MMBT5087
Typical Characteristics
(Continuce)
- GAIN BANDWIDTH PRODUCT (MHz)
5
350
NF - NOISE FIGURE (dB)
V
CE
= 5V
300
250
200
150
100
50
0
0.1
V
CE
= 5V
4
3
2
µ
µ
µ
µ
µ
I
C
= - 250
µA,
R
S
= 5.0 kΩ
Ω
Ω
µ
µ
µ
µ
µ
I
C
= - 500
µA,
R
S
= 1.0 kΩ
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
1
µ
µ
µ
µ
µ
Ω
Ω
I
C
= - 20
µA,
R
S
= 10 kΩ
Ω
Ω
Ω
1000
10000
f - FREQUENCY (Hz)
1000000
1
10
I
C
- COLLECTOR CURRENT (mA)
100
0
100
f
T
Figure 7. Gain Bandwidth Product
vs Collector Current
Figure 8. Noise Figure vs Frequency
8
V
CE
= 5V
P
D
- POWER DISSIPATION (mW)
625
BANDWIDTH = 15.7 kHz
NF - NOISE FIGURE (dB)
TO-92
500
375
250
125
0
6
I
C
= 10
µ
µA
µ
µ
µ
µ
4
µ
I
C
= 100
µA
µ
µ
µ
SOT-23
2
µ
0
1,000
2,000
5,000
10,000
R
S
- SOURCE RESISTANCE (
Ω
)
Ω
Ω
Ω
20,000
Ω
50,000
100,000
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
Ω
Figure 9. Wideband Noise Frequency
vs Source Resistance
√
√
√
√
√
√
√
i
n 2
- EQUIVALENT INPUT NOISE CURRENT (pA/ Hz)
µ √
√
µ
- EQUIVALENT INPUT NOISE VOLTAGE (
µ
V/
√
Hz)
µ
µ
√
√
µ √
Figure 10. Power Dissipation vs
Ambient Temperature
10
5
2
1
0.5
0.2
0.1
0.001
0.01
0.1
I
C
- COLLECTOR CURRENT (mA)
1
V
CE
= - 5.0V
1
,f=
H
00
z
0.1
V
CE
= - 5.0V
0.05
0.02
0.01
in
Hz
.0 k
=1
,f
z
i n
kH
10
f=
,
i n
e n , f = 100 Hz
0.005
e n , f = 1.0 kHz
e n , f = 10 kHz
0.002
0.001
0.001
2
n
0.01
0.1
I
C
- COLLECTOR CURRENT (mA)
√
e
1
Figure 11. Equivalent Input Noise Current
vs Collector Current
Figure 12. Equivalent Input Noise Voltage
vs Collector Current
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
2N5086/2N5087/MMBT5087
Typical Characteristics
1,000,000
(Continuce)
R
S
- SOURCE RESISTANCE
Ω
Ω
)
(
Ω
R
S
- SOURCE RESISTANCE (
Ω
)
1,000,000
Ω
Ω
10
6.0
100,000
dB
4.0
1.0
dB
dB
2.0
dB
dB
100,000
12
dB
8.0
dB
5.0
dB
3.0
dB
5.0
dB
8.0
dB
12
dB
V
CE
= - 5V
f = 100 Hz
BANDWIDTH = 15 Hz
10,000
4.0
dB
6.0
dB
10
dB
V
CE
= - 5V
f = 10 kHz
BANDWIDTH = 1.5 kHz
Ω
Ω
10,000
1,000
100
1,000
100
0.001
0.01
0.1
I
C
- COLLECTOR CURRENT (mA)
1
0.001
0.01
0.1
I
C
- COLLECTOR CURRENT (mA)
1
Figure 13. Contours of Constanct
Narrow Band Noise Figure
Figure 14. Contours of Constanct
Narrow Band Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
Ω
Ω
10
6.0
dB
100,000
dB
4.0
dB
V
CE
= - 5V
f = 1.0 kHz
BANDWIDTH = 150 Hz
Ω
R
S
- SOURCE RESISTANCE (
Ω
)
1,000,000
10,000
Ω
0
6.
dB
0
4.
5,000
dB
0
2.
dB
2,000
1,000
500
4.
0
6.0
dB
10,000
4.0
dB
dB
6.0
dB
10
dB
1,000
V
CE
= - 5V
f = 10 MHz
200
BANDWIDTH
= - 2 kHz
100
100
0.001
0.01
0.1
I
C
- COLLECTOR CURRENT (mA)
1
0.01
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
Figure 15. BContours of Constant
Narrow Band Noise Figure
Figure 16. Contours of Constant
Narrow Band Noisd Figure
©2003 Fairchild Semiconductor Corporation
Rev. B1, September 2003
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