2N5210/MMBT5210
2N5210/MMBT5210
NPN General Purpose Amplifier
C
This device is designed for low noise, high gain, general purpose
amplifier applications at collector currents from 1µA to 50 mA.
C
BE
TO-92
B
E
SOT-23
Mark: 3M
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
50
50
4.5
100
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
2N5210
625
5.0
83.3
200
MMBT5210
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
2002 Fairchild Semiconductor Corporation
2N5210, Rev B
2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
I
CBO
I
EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 0.1 mA, I
E
= 0
V
CB
= 35 V, I
E
= 0
V
EB
= 3.0 V, I
C
= 0
50
50
50
50
V
V
nA
nA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 100
µA,
V
CE
= 5.0 V
I
C
= 1.0 mA, V
CE
= 5.0 V
I
C
= 10 mA, V
CE
= 5.0 V*
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 1.0 mA, V
CE
= 5.0 V
200
250
250
600
V
CE(
sat
)
V
BE(
on
)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.7
0.85
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
cb
h
fe
NF
Current Gain - Bandwidth Product
Collector-Base Capacitance
Small-Signal Current Gain
Noise Figure
I
C
= 500
µA,V
CE
= 5.0 V,
f= 20 MHz
V
CB
= 5.0 V, I
E
= 0, f = 100 kHz
I
C
= 1.0 mA, V
CE
= 5.0 V,
f = 1.0 kHz
I
C
= 20
µA,
V
CE
= 5.0 V,
R
S
= 22 kΩ, f = 10 Hz to 15.7 kHz
I
C
= 20
µA,
V
CE
= 5.0 V,
R
S
= 10 kΩ, f = 1.0 kHz
30
4.0
250
900
2.0
3.0
dB
dB
MHz
pF
3
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)
Typical Characteristics
1200
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
1000
Collector-Emitter Saturation
Voltage vs Collector Current
0.30
125 C
o
V
C E
= 5.0V
0.25
β
= 10
800
0.20
600
25 C
o
125 C
0.15
o
400
o
0.10
25 C
o
200
- 40 C
0.05
- 40 C
1
10
100
o
0
0.01
0.03
0.1
0.3
1
3
10
30
100
0.1
I
C
- COLLECTOR CURRENT (m A)
I
C
- COLLECTOR CURR EN T (m A)
V
BESAT
- COLLECTOR-EMITTER VOLTAGE (V)
1.0
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1.0
- 40 C
0.8
o
0.8
- 40 C
25 C
o
o
0.6
25 C
125 C
o
o
0.6
125 C
0.4
o
0.4
β
= 10
0.2
0.1
1
10
100
0.2
0.1
1
V
C E
= 5.0V
10
I
C
- COLLECTO R CURRENT (mA)
I
C
- COLLECTO R CURRENT (m A)
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
10
V
CB
= 45V
1
0.1
25
50
75
100
125
T
A
- AMBIE NT TEMP ERATURE (
°
C)
150
2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Input and Output Capacitance
vs Reverse Bias Voltage
f = 1.0 MHz
CAPACITANCE (pF)
4
3
C te
Contours of Constant Gain
Bandwidth Product (f
T
)
V
CE
- COLLECTOR VOLTAGE (V)
10
7
5
150 MHz
175 MHz
5
3
2
2
1
0
C ob
125 MHz
100 MHz
75 MHz
0
4
8
12
16
REVERSE BIAS VOLTAGE (V)
20
1
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
CHARACTERIS TIC S RELATI VE TO VALUE AT T
A
= 25 C
Normalized Collector-Cutoff Current
vs Ambient Temperature
1000
Wideband Noise Frequency
vs Source Resistance
5
V
CE
= 5.0 V
°
NF - NOISE FIGURE (dB)
4
3
2
1
0
BANDWIDTH = 15.7 kHz
100
I
C
= 100
µ
A
I
C
= 30
µ
A
3
10
I
C
= 10
µ
A
2,000
5,000
10,000
20,000
50,000
100,000
1
25
50
75
100
125
T
A
- AMBIE NT TEMPERATURE (
°
C)
150
1,000
R
S
- SOURCE RESISTANCE (
Ω
)
Noise Figure vs Frequency
10
P
D
- POWER DISSIPATION (W)
NF - NOISE FIGURE (dB)
8
I
C
= 200
µ
A,
R
S
= 10 kΩ
Ω
I
C
= 100
µ
A,
R
S
= 10 kΩ
Ω
I
C
= 1.0 mA,
R
S
= 500
Ω
Base-Emitter Saturation
Voltage vs Collector Current
1.00
0.75
6
TO-92
0.50
4
I
C
= 1.0 mA,
R
S
= 5.0 kΩ
Ω
V
CE
= 5.0V
SOT-23
0.25
2
0
0.0001
0.001
0.01
0.1
1
f - FREQUENCY (MHz)
10
100
0.00
0
25
50
75
100
o
125
150
TEMPERATURE ( C)
2N5210/MMBT5210
NPN General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Contours of Constant
Narrow Band Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
3.0 dB
5,000
Contours of Constant
Narrow Band Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
10,000
5,000
10,000
4.0 dB
2,000
1,000
500
V
CE
= 5.0 V
f = 100 Hz
BANDWIDTH
= 20 Hz
2.0 dB
2,000
6.0 dB
8.0 dB
10 dB
12 dB
14 dB
3.0 dB
1,000
4.0 dB
500
V
CE
= 5.0 V
f = 1.0 kHz
BANDWIDTH
200
= 200 Hz
6.0 dB
8.0 dB
200
100
100
1
10
100
I
C
- COLLECTOR CURRENT (
µ
A)
1,000
1
10
100
I
C
- COLLECTOR CURRENT (
µ
A)
1,000
Contours of Constant
Narrow Band Noise Figure
R
S
- SOURCE RESISTANCE (
Ω
)
5000
2000
1000
500
200
100
1
V
CE
= 5.0V
f = 10kHz
BANDWIDTH
= 2.0kHz
R
S
- SOURCE RESISTANCE (
Ω
)
10000
1.0 dB
2.0 dB
3.0 dB
4.0 dB
6.0 dB
8.0 dB
Contours of Constant
Narrow Band Noise Figure
10000
5000
2000
1000
2.0 dB
3.0 dB
5.0
dB
6.0
dB
10
100
I
C
- COLLECTOR CURRENT (
µ
A)
1000
V
CE
=
4.0 dB
500
5.0V
f = 1.0 MHz
200
BANDWIDTH
7.0 dB
= 200kHz
8.0 dB
100
0.01
0.1
1
I
C
- COLLECTOR CURRENT (
µ
A)
10
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