KSB1149
KSB1149
Low Collector Saturation Voltage
Built-in Damper Diode at E-C
• High DC Current Gain
• High Power Dissipation : P
C
=1.3W (T
a
=25°C)
1
TO-126
2.Collector
3.Base
1. Emitter
PNP Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Value
- 100
- 100
-8
-3
-5
1.3
15
150
- 55 ~ 150
Units
V
V
V
A
A
W
W
°C
°C
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
t
ON
t
STG
t
F
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Turn ON Time
Storage Time
Fall Time
Test Condition
V
CB
= - 100V, I
E
= 0
V
EB
= - 5V, I
C
= 0
V
CE
= - 2V, I
C
= - 1.5A
V
CE
= - 2V, I
C
= - 3A
I
C
= - 1.5A, I
B
= - 1.5mA
I
C
= - 1.5A, I
B
= - 1.5mA
V
CC
= - 40V, I
C
= - 1.5A
I
B1
= - I
B2
= - 1.5mA
R
L
= 27Ω
2000
1000
- 0.9
- 1.5
0.5
2
1
Min.
Typ.
Max.
- 10
-2
20000
- 1.2
-2
V
V
µs
µs
µs
Units
µA
mA
* Pulse test: PW≤350µs, duty Cycle≤2% Pulsed
h
FE
Classification
Classification
h
FE1
O
2000 ~ 5000
Y
4000 ~ 12000
G
6000 ~ 20000
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSB1149
Typical Characteristics
-5
I
B
=
-1
m
100000
A
I
B
=-500uA
I
B
=-400uA
I
B
=-300uA
I
B
=-200uA
Ic[A], COLLECTOR CURRENT
I
B
=-900uA
-4
V
CE
= -2V
Pulsed
I
B
=-800uA
I
B
=-700uA
I
B
=-600uA
h
FE
, DC CURRENT GAIN
-5
10000
-3
I
B
=-100uA
-2
1000
-1
-0
-0
-1
-2
-3
-4
100
-0.01
-0.1
-1
-10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-100
-10
Ic = 1000 I
B
Pulsed
Ic(Pulse)
Ic(DC)
I
C
[A], COLLECTOR CURRENT
Dis
-1
sip
20
10
0m
s
s
0u
10 us
0
30
s
1m
m
s
ati
on
-10
Lim
ite
d
s/b
ite
Lim
V
BE
(sat)
-1
d
-0.1
V
CE
(sat)
-0.1
-0.1
-1
-10
-0.01
-1
Tc=25 C
Single Pulse
-10
-100
500
o
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 4. Forward Bias Safe Operating Area
160
20
140
P
C
[W], POWER DISSIPATION
120
15
d
T
[%], Ic DERATING
100
80
s/b
DI
10
LIM
60
ITE
D
TI
O
SS
IP
A
40
N
5
LI
20
M
IT
ED
0
25
50
o
0
75
100
125
150
175
200
0
25
50
o
75
100
125
150
175
T
C
[ C], CASE TEMPERATURE
T
C
[ C], CASE TEMPERATURE
Figure 5. Derating Curve of Safe Operating Areas
Figure 6. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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E
2
CMOS™
FACT™
FACT Quiet Series™
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®
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DISCLAIMER
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
®
QFET™
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Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
Embedded System
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