RN1905FE,LF(CT datasheet, PDF - EEWORLD Datasheet

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RN1905FE,LF(CT: Descriptiontrans prebias 2npn 50v 100mw es6; Categorysemiconductor Discrete semiconductor; File Size546KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN1905FE,LF(CT Overview

trans prebias 2npn 50v 100mw es6

RN1905FE,LF(CT Parametric

Parameter Name	Attribute value
Datasheets
RN1901FE-06FE
Standard Package	1
Category	Discrete Semiconductor Products
Family	Transistors (BJT) - Arrays, Pre-Biased
Packaging	Cut Tape (CT)
Transistor Type	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	2.2k
Resistor - Emitter Base (R2) (Ohms)	47k
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transiti	250MHz
Power - Max	100mW
Mounting Type	Surface Mou
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6
Other Names	RN1905FELF(CTCT

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RN1901FE~RN1906FE

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)

RN1901FE, RN1902FE, RN1903FE

RN1904FE, RN1905FE, RN1906FE

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Two devices are incorporated into an Extreme-Super-Mini (6-pin)

package.

Incorporating a bias resistor into a transistor reduces parts count.

Reducing the parts count enables the manufacture of ever more compact

equipment and lowers assembly cost.

•

Complementary to RN2901FE to RN2906FE

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1901FE

RN1902FE

RN1903FE

RN1904FE

RN1905FE

RN1906FE

R1 (kΩ)

4.7

2.2

4.7

R2 (kΩ)

4.7

JEDEC

JEITA

TOSHIBA

―

2-2N1G

Weight: 3 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

(Q1, Q2 common)

Equivalent Circuit

Characteristics

Collector-base voltage

Collector-emitter voltage

RN1901FE to

RN1906FE

RN1901FE to

RN1904FE

RN1905FE

RN1906FE

Symbol

CBO

CEO

Rating

EBO

(Note1)

stg

100

150

−55

to 150

°C

Unit

(top view)

Emitter-base voltage

Collector current

Collector power dissipation RN1901FE to

RN1906FE

Junction temperature

Storage temperature range

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Total rating

Note1:

Start of commercial production

2000-05

2014-03-01

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