2N4123TFR datasheet, PDF - EEWORLD Datasheet

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2N4123TFR: Descriptiontransistor npn 40v 200ma TO-92; CategoryDiscrete semiconductor The transistor; File Size77KB，7 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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2N4123TFR Overview

transistor npn 40v 200ma TO-92

2N4123TFR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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2N4123

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2N4123

TO-92

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers

and switches requiring collector currents to 100 mA.

Absolute Maximum Ratings*

Symbol

CEO

CBO

EBO

, T

stg

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

TA = 25°C unless otherwise noted

Parameter

Value

5.0

200

-55 to +150

Units

°C

Operating and Storage Junction Temperature Range

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

These ratings are based on a maximum junction temperature of 150 degrees C.

These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

θJC

θJA

TA = 25°C unless otherwise noted

Characteristic

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Max

2N4123

625

5.0

83.3

200

Units

mW/°C

°C/W

2001 Fairchild Semiconductor Corporation

2N4123, Rev A

2N4123TFR Related Products

	2N4123TFR	2N4123BU	2N4123TA	2N4123TAR	2N4123TF
Description	transistor npn 40v 200ma TO-92	IC trans npn SS GP 200ma TO-92	transistor npn 40v 200ma TO-92	transistor npn 40v 200ma TO-92	transistor npn 40v 200ma TO-92
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Parts packaging code	TO-92	TO-92	TO-92	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A	0.2 A	0.2 A	0.2 A
Collector-emitter maximum voltage	30 V	30 V	30 V	30 V	30 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	25	25	25	25	25
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e3	e3	e3	e3	e3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE	NOT APPLICABLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz	250 MHz	250 MHz
Base Number Matches	1	1	1	1	1

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