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ZDT694TC

Description
trans dual npn 120v 500ma 8sm
Categorysemiconductor    Discrete semiconductor   
File Size68KB,3 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance  
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ZDT694TC Overview

trans dual npn 120v 500ma 8sm

ZDT694TC Parametric

Parameter NameAttribute value
Datasheets
ZDT694
Product Photos
SOT-223-8
RoHS Informati
RoHS Cert of Compliance
Standard Package4,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Arrays
PackagingTape & Reel (TR)
Transistor Type2 NPN (Dual)
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)120V
Vce Saturation (Max) @ Ib, Ic500mV @ 5mA, 400mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce400 @ 200mA, 2V
Power - Max2.75W
Frequency - Transiti130MHz
Mounting TypeSurface Mou
Package / CaseSOT-223-8
Supplier Device PackageSM8
SM-8 DUAL NPN MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
C
1
C
1
C
2
C
2
PARTMARKING DETAIL – T694
B
1
E
1
B
2
E
2
ZDT694
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
T
j
:T
stg
VALUE
120
120
5
1
0.5
-55 to +150
UNIT
V
V
V
A
A
°C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25°C*
Any single die “on”
Both die “on” equally
Derate above 25°C*
Any single die “on”
Both die “on” equally
Thermal Resistance - Junction to Ambient*
Any single die “on”
Both die “on” equally
SYMBOL
P
tot
VALUE
2.25
2.75
18
22
55.6
45.5
UNIT
W
W
mW/ °C
mW/ °C
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 342

ZDT694TC Related Products

ZDT694TC
Description trans dual npn 120v 500ma 8sm
Standard Package 4,000
Category Discrete Semiconductor Products
Family Transistors (BJT) - Arrays
Packaging Tape & Reel (TR)
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 400mA
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 200mA, 2V
Power - Max 2.75W
Frequency - Transiti 130MHz
Mounting Type Surface Mou
Package / Case SOT-223-8
Supplier Device Package SM8
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