RN1406S,LF datasheet, PDF - EEWORLD Datasheet

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RN1406S,LF: Descriptiontransistor npn 50v 100ma S-mini; Categorysemiconductor Discrete semiconductor; File Size582KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN1406S,LF Overview

transistor npn 50v 100ma S-mini

RN1406S,LF Parametric

Parameter Name	Attribute value
Datasheets
RN1401 - 1406
Product Photos
SOT-23-3
Product Training Modules
General Purpose Discrete Items
Standard Package	3,000
Category	Discrete Semiconductor Products
Family	Transistors (BJT) - Single, Pre-Biased
Packaging	Tape & Reel (TR)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	47k
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transiti	250MHz
Power - Max	200mW
Mounting Type	Surface Mou
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	S-Mini
Dynamic Catalog	NPN Pre-biased Transistors
Other Names	RN1406SLFRN1406SLFTR

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RN1401½RN1406

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1401, RN1402, RN1403

RN1404, RN1405, RN1406

Switching, Inverter Circuit, Interface Circuit

and Driver Circuit Applications

With built-in bias resistors

Simplified circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN2401 to RN2406

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN1401

RN1402

RN1403

RN1404

RN1405

RN1406

R1 (kΩ

4.7

2.2

4.7

R2 (kΩ

4.7

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN1401 to 1406

RN1401 to 1404

RN1405, 1406

Symbol

CBO

CEO

EBO

stg

Rating

100

200

150

−55

to 150

Unit

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1983-06

2014-03-01

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