KSC2785
KSC2785
Audio Frequency Amplifier & High
Frequency OSC.
• Complement to KSA1175
• Collector-Base Voltage : V
CBO
=60V
TO-92S
1
1.Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=6V, I
C
=1.0mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0, f=1MHz
V
CE
=6, I
C
=0.5mA
f=1KHz, R
S
=500Ω
70
0.15
300
2.5
4.0
Min.
60
50
5
0.1
0.1
700
0.3
V
MHz
pF
dB
Typ.
Max.
Units
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
L
350 ~ 700
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
KSC2785
Typical Characteristics
100
100
I
B
= 400
µ
A
80
V
CE
= 6V
I
B
= 300
µ
A
I
B
= 250
µ
A
I
B
= 200
µ
A
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
I
B
= 350
µ
A
10
60
40
I
B
= 150
µ
A
I
B
= 100
µ
A
1
20
I
B
= 50
µ
A
0
0
4
8
12
16
20
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 1. Static Characteristics
Figure 2. Base-Emitter On Voltage
f
T
[MHz], CURRENT GAIN BANDWIDTH PRODUCT
10000
1000
V
CE
= 6V
V
CE
= 6V
h
FE
, DC CURRENT GAIN
1000
100
100
10
10
1
10
100
1000
1
0.1
1
10
100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 3. DC Current Gain
Figure 4. f
T
- I
C
V
BE
(sat), V
CE
(sat)[mV], SATURATION VOLTAGE
10000
100
I
C
= 10 I
B
1000
C
ob
[pF], OUTPUT CAPACITANCE
f = 1 MHz
I
E
= 0
10
V
BE
(sat)
100
1
V
CE
(sat)
10
1
10
100
1000
0.1
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Saturation Voltage
Figure 6. Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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C™
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®
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
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As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
Embedded System
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