KSA709
KSA709
High Voltage Amplifier
•
•
•
•
Collector-Base Voltage : V
CBO
= -160V
Collector Power Dissipation : P
C
=800mW
Complement to KSC1009
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
-160
-150
-8
-700
800
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
= -100µA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -100V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -2V, I
C
= -50mA
I
C
= -200mA, I
B
= -20mA
I
C
= -200mA, I
B
= -20mA
V
CE
= -10V, I
C
= -50mA
V
CB
= -10V, I
E
=0, f=1MHz
70
-0.3
-0.9
50
10
Min.
-160
-150
-8
-0.1
-0.1
400
-0.4
-1.0
V
V
MHz
pF
Typ.
Max.
Units
V
V
V
µA
µA
* Pulse Test: PW≤350µs, Duty cycle≤2%
h
FE
Classification
Classification
h
FE
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
KSA709
Typical Characteristics
-100
1000
I
B
= -0.8mA
V
CE
= -5V
I
C
[mA], COLLECTOR CURRENT
I
B
= -0.6mA
-80
h
FE
, DC CURRENT GAIN
I
B
= -0.4mA
-60
100
-40
10
I
B
= -0.2mA
-20
0
0
-2
-4
-6
-8
-10
1
-0.1
-1
-10
-100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
-1000
I
C
= 10 I
B
V
CE
= -1V
-1
V
BE(sat)
I
C
[mA], COLLECTOR CURRENT
-100
-0.1
-10
V
CE(sat)
-0.01
-1
-10
-100
-1000
-1
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
I
E
= 0
f = 1MHz
C
ob
[pF], CAPACITANCE
10
1
-1
-10
-100
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2004 Fairchild Semiconductor Corporation
Rev. B1, April 2004
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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The datasheet is printed for reference information only.
Preliminary
No Identification Needed
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Obsolete
Not In Production
©2004 Fairchild Semiconductor Corporation
Rev. I10
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