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2SC5174(TP,Q)

Description
transistor npn 230v 1A tpl
Categorysemiconductor    Discrete semiconductor   
File Size130KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance  
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2SC5174(TP,Q) Overview

transistor npn 230v 1A tpl

2SC5174(TP,Q) Parametric

Parameter NameAttribute value
Datasheets
2SC5174
Standard Package1,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
PackagingTape & Box (TB)
Transistor TypeNPN
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)230V
Vce Saturation (Max) @ Ib, Ic1.5V @ 50mA, 500mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Power - Max1.8W
Frequency - Transiti100MHz
Mounting TypeThrough Hole
Package / CaseTO-220-3 No Tab
Supplier Device PackageTPL
2SC5174
TOSHIBA Transistor
Silicon NPN Epitaxial Type
2SC5174
Power Amplifier Applications
Driver Stage Amplifier Applications
Unit: mm
High transition frequency: f
T
= 100 MHz (typ.)
Complementary to 2SA1932
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
230
230
5
1
0.1
1.8
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-10T1A
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 1.5 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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