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BL2306G

Description
Power Field-Effect Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size600KB,5 Pages
ManufacturerGalaxy Microelectronics
Download Datasheet Parametric View All

BL2306G Overview

Power Field-Effect Transistor,

BL2306G Parametric

Parameter NameAttribute value
Objectid145209583882
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Product specification
N
-Channel Enhancement Mode Power Mosfet
FEATURES
BL2306
Capable of 2.5V gate drive
Lower on-resistance
Reliable and Rugged
Electrostatic Sensitive Devices.
MSL 1.
Pb
Lead-free
APPLICATIONS
Power Management in Notebook.
Portable Equipment.
Battery Powered System.
SOT-23
ORDERING INFORMATION
Type No.
BL2306
□:
none is for Lead Free package;
“G” is for Halogen Free package.
Marking
2306
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
R
θJA
T
J,
T
stg
Parameter
Drain-Source voltage
Gate -Source voltage
Maximum Drain current
T
A
=25℃
T
A
=70℃
Value
20
±12
5.3
4.3
10
1.38
90
-55~+150
Units
V
V
A
A
W
℃/W
Pulsed Drain current
Power Dissipation
Thermal resistance,Junction-to-Ambient
Operating Junction and Storage
Temperature Range
MTM0068A
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