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KSA614OTU

Description
transistor pnp 55v 3A TO-220
CategoryDiscrete semiconductor    The transistor   
File Size43KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSA614OTU Overview

transistor pnp 55v 3A TO-220

KSA614OTU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-220AB
package instructionTO-220, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)3 A
Collector-emitter maximum voltage55 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power dissipation(Abs)25 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
KSA614
KSA614
Low Frequency Power Amplifier
Power Regulator
• Collector-Base Voltage : V
CBO
= -80V
• Collector Dissipation : P
C
=25W (T
C
=25°C)
1
TO-220
2.Collector
3.Emitter
1.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector- Base Voltage
Collector- Emitter Voltage
Emitter- Base Voltage
Collector Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Ratings
- 80
- 55
-5
-3
25
150
- 55 ~ 150
Units
V
V
V
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
h
FE
V
CE
(sat)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Test Condition
I
C
= - 500µA, I
E
= 0
I
C
= - 10mA, I
B
= 0
I
E
= - 500µA, I
C
= 0
V
CB
= - 50V, I
E
= 0
V
CE
= - 5V, I
C
= - 0.5A
I
C
= - 1A, I
B
= - 0.1A
40
- 0.15
Min.
- 80
- 55
-5
- 50
240
- 0.5
V
Typ.
Max.
Units
V
V
V
µA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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