KSH350TF datasheet, PDF - EEWORLD Datasheet

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KSH350TF: Descriptiontransistor pnp 300v 500ma dpak; CategoryDiscrete semiconductor The transistor; File Size63KB，5 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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KSH350TF Overview

transistor pnp 300v 500ma dpak

KSH350TF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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KSH350

High Voltage Power Transistors

D-PAK for Surface Mount Applications

• Lead Formed for Surface Mount Applications (No Suffix)

• Straight Lead (I-PAK, “- I” Suffix)

D-PAK

1.Base

I-PAK

3.Emitter

2.Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

=25°C unless otherwise noted

Symbol

CBO

CEO

EBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Collector Dissipation (T

= 25°C)

Collector Dissipation (T

= 25°C)

Junction Temperature

Parameter

Value

- 300

-3

- 0.5

- 0.75

1.56

150

Units

°C

Electrical Characteristics

=25°C unless otherwise noted

Symbol

CEO

(sus)

CEO

EBO

Parameter

* Collector-Emitter Sustaining Voltage

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

Test Condition

= -1mA, I

= 0

= -300V, I

= -3V, I

= 0

= -10V, I

= -50mA

Min.

-300

Max.

-0.1

240

Units

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Rev. A4, October 2002

KSH350TF Related Products

	KSH350TF
Description	transistor pnp 300v 500ma dpak
Is it Rohs certified?	conform to
Parts packaging code	TO-252
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Is Samacsys	N
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	15 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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