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KSE171STU

Description
transistor pnp 60v 3A TO-126
CategoryDiscrete semiconductor    The transistor   
File Size48KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSE171STU Overview

transistor pnp 60v 3A TO-126

KSE171STU Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)3 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)12
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)12.5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
Base Number Matches1
KSE170/171/172
KSE170/171/172
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
1
TO-126
2.Collector
3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: KSE170
: KSE171
: KSE172
: KSE170
: KSE171
: KSE172
1. Emitter
Value
- 60
- 80
- 100
- 40
- 60
- 80
-7
-3
-6
-1
12.5
1.5
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breaksown Voltage
: KSE170
: KSE171
: KSE172
Collector Cut-off Current
: KSE170
: KSE171
: KSE172
: KSE170
: KSE171
: KSE172
Test Condition
I
C
= 10mA, I
B
= 0
Min.
-40
-60
-80
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
50
30
12
250
Max.
Units
V
V
V
µA
µA
µA
mA
mA
mA
µA
I
CBO
V
CB
= - 60V, I
B
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
V
CB
= - 60V, I
E
= 0, T
C
= 150°C
V
CB
= - 80V, I
E
= 0, T
C
= 150°C
V
CB
= - 100V, I
E
= 0, T
C
= 150°C
V
BE
= - 7V, I
C
= 0
V
CE
= - 1V, I
C
= - 100mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 1.5A
I
C
= - 500mA, I
B
= - 50mA
I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 10V, I
C
= - 100mA
V
CB
= - 10V, I
E
= 0, f = 0.1MHz
50
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
-0.3
-0.9
-1.7
-1.5
-2.0
-1.2
50
V
V
V
V
V
V
MHz
pF
V
BE
(sat)
V
BE
(on)
f
T
C
ob
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001

KSE171STU Related Products

KSE171STU KSE170S
Description transistor pnp 60v 3A TO-126 transistor pnp 40v 3A TO-126
Is it Rohs certified? conform to conform to
Reach Compliance Code unknow unknown
ECCN code EAR99 EAR99
Is Samacsys N N
Maximum collector current (IC) 3 A 3 A
Collector-emitter maximum voltage 60 V 40 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 12 12
JEDEC-95 code TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 12.5 W 12.5 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 50 MHz 50 MHz
Base Number Matches 1 1

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