KSE170/171/172
KSE170/171/172
Low Power Audio Amplifier
Low Current, High Speed Switching Applications
1
TO-126
2.Collector
3.Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
Parameter
: KSE170
: KSE171
: KSE172
: KSE170
: KSE171
: KSE172
1. Emitter
Value
- 60
- 80
- 100
- 40
- 60
- 80
-7
-3
-6
-1
12.5
1.5
150
- 65 ~ 150
Units
V
V
V
V
V
V
V
A
A
A
W
W
°C
°C
V
CEO
Collector-Emitter Voltage
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
Junction Temperature
Storage Temperature
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
Parameter
Collector-Emitter Breaksown Voltage
: KSE170
: KSE171
: KSE172
Collector Cut-off Current
: KSE170
: KSE171
: KSE172
: KSE170
: KSE171
: KSE172
Test Condition
I
C
= 10mA, I
B
= 0
Min.
-40
-60
-80
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
-0.1
50
30
12
250
Max.
Units
V
V
V
µA
µA
µA
mA
mA
mA
µA
I
CBO
V
CB
= - 60V, I
B
= 0
V
CB
= - 80V, I
E
= 0
V
CB
= - 100V, I
E
= 0
V
CB
= - 60V, I
E
= 0, T
C
= 150°C
V
CB
= - 80V, I
E
= 0, T
C
= 150°C
V
CB
= - 100V, I
E
= 0, T
C
= 150°C
V
BE
= - 7V, I
C
= 0
V
CE
= - 1V, I
C
= - 100mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 1V, I
C
= - 1.5A
I
C
= - 500mA, I
B
= - 50mA
I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
I
C
= - 1.5A, I
B
= - 150mA
I
C
= - 3A, I
B
= - 600mA
V
CE
= - 1V, I
C
= - 500mA
V
CE
= - 10V, I
C
= - 100mA
V
CB
= - 10V, I
E
= 0, f = 0.1MHz
50
I
EBO
h
FE
Emitter Cut-off Current
DC Current Gain
V
CE
(sat)
Collector-Emitter Saturation Voltage
-0.3
-0.9
-1.7
-1.5
-2.0
-1.2
50
V
V
V
V
V
V
MHz
pF
V
BE
(sat)
V
BE
(on)
f
T
C
ob
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
KSE170/171/172
Typical Charactristics
V
CE
= -1V
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
-2.0
-1.8
-1.6
-1.4
-1.2
-1.0
h
FE
, DC CURRENT GAIN
100
V
BE
(sat) I
C
/I
B
=10
-0.8
-0.6
-0.4
V
BE
@V
CE
= -1V
I
C
/I
B
=10
-0.2
I
C
/I
B
=5
V
CE
(sat)
-0.1
-1
-10
-100
10
-0.1
-1
-0.0
-0.01
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
1000
f=0.1MHZ
I
E
=0
C
ob
[pF], CAPACITANCE
t
D
,t
R
[ns], TURN ON TIME
100
100
t
R
t
D
10
10
1
-0.1
-1
-10
-100
1
-0.01
-0.1
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
1000
-10
t
F
,t
STG
[ns], TURN OFF TIME
0
µ
10
t
STG
I
C
[A], COLLECTOR CURRENT
50
0
µ
s
s
-1
DC
50m
s
100
t
F
-0.1
KSE170
KSE171
KSE172
V
CE
MAX.
-0.01
-1
-10
-100
10
-0.1
-1
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
©2001 Fairchild Semiconductor Corporation
Rev. A1, January 2001
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2
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®
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®
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®
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when properly used in accordance with instructions for use
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H2