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KSC2785LTA

Description
transistor npn 50v 150ma TO-92s
CategoryDiscrete semiconductor    The transistor   
File Size38KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

KSC2785LTA Overview

transistor npn 50v 150ma TO-92s

KSC2785LTA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-92S
package instructionTO-92S, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)350
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
KSC2785
KSC2785
Audio Frequency Amplifier & High
Frequency OSC.
• Complement to KSA1175
• Collector-Base Voltage : V
CBO
=60V
TO-92S
1
1.Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
250
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
f
T
C
ob
NF
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=6V, I
C
=1.0mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=10mA
V
CB
=6V, I
E
=0, f=1MHz
V
CE
=6, I
C
=0.5mA
f=1KHz, R
S
=500Ω
70
0.15
300
2.5
4.0
Min.
60
50
5
0.1
0.1
700
0.3
V
MHz
pF
dB
Typ.
Max.
Units
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
L
350 ~ 700
©2002 Fairchild Semiconductor Corporation
Rev. A2, September 2002
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