SML60J62
SOT–227 Package Outline.
Dimensions in mm (inches)
3 1 .5 (1 .2 4 0 )
3 1 .7 (1 .2 4 8 )
7 .8 (0 .3 0 7 )
8 .2 (0 .3 2 2 )
1 1 .8 (0 .4 6 3 )
1 2 .2 (0 .4 8 0 )
W = 4 .1 (0 .1 6 1 )
4 .3 (0 .1 6 9 )
H=
4 .8 (0 .1 8 7 )
4 .9 (0 .1 9 3 )
(4 places)
1 2 .6 (0 .4 9 6 )
1 2 .8 (0 .5 0 4 )
2 5 .2 (0 .9 9 2 )
2 5 .4 (1 .0 0 0 )
8 .9 (0 .3 5 0 )
9 .6 (0 .3 7 8 )
Hex Nut M 4
(4 places)
1
R
2
4 .0 (0 .1 5 7 )
4 .2 (0 .1 6 5 )
0 .7 5 (0 .0 3 0 )
0 .8 5 (0 .0 3 3 )
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
4
3.3 (0 .1 2 9)
3.6 (0.14 3 )
1 4 .9 (0.58 7 )
1 5 .1 (0.59 4 )
3 0 .1 (1 .1 8 5 )
3 0 .3 (1 .1 9 3 )
3 8 .0 (1.4 9 6 )
3 8 .2 (1.5 0 4 )
3
5 .1 (0 .2 0 1 )
5 .9 (0 .2 3 2 )
1 .9 5 (0 .0 7 7 )
2 .1 4 (0 .0 8 4 )
R =
4 .0 (0 .1 57 )
(2 P lac e s)
S
D
V
DSS
600V
62A
I
D(cont)
R
DS(on)
0.075
W
•
•
•
•
Faster Switching
Lower Leakage
100% Avalanche Tested
Popular SOT–227 Package
S
G
* Source terminals are shorted
internally. Current handling
capability is equal for
either Source terminal.
D
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
600
62
248
±30
±40
700
5.6
–55 to 150
300
62
50
3600
V
A
A
V
W
W/°C
°C
A
mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 1.87mH, R
G
= 25
W
, Peak I
L
= 62A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
5/99
SML60J62
STATIC ELECTRICAL RATINGS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
V
GS(TH)
I
D(ON)
R
DS(ON)
Characteristic
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current
2
Drain – Source On State Resistance
2
Test Conditions
V
GS
= 0V , I
D
= 250
m
A
V
DS
= V
DSS
V
DS
= 0.8V
DSS
, T
C
= 125°C
V
GS
= ±30V , V
DS
= 0V
V
DS
= V
GS
, I
D
= 5mA
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
2
62
0.075
Min.
600
Typ.
Max. Unit
V
100
500
±100
4
m
A
nA
V
A
W
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DD
= 0.5 V
DSS
I
D
= I
D
[Cont.] @ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
R
G
= 0.6
W
I
D
= I
D
[Cont.] @ 25°C
Min.
Typ.
16000
2000
720
700
85
330
25
19
88
11
ns
nC
Max. Unit
pF
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Continuous Source Current
Pulsed Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
(Body Diode)
(Body Diode)
V
GS
= 0V , I
S
= – I
D
[Cont.]
I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/
m
s
I
S
= – I
D
[Cont.] , dl
s
/ dt = 100A/
m
s
Min.
Typ.
Max. Unit
62
A
248
1.3
880
31
V
ns
m
C
Max. Unit
0.18
°C/W
40
THERMAL CHARACTERISTICS
R
q
JC
R
q
JA
Characteristic
Junction to Case
Junction to Ambient
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
m
S , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Min.
Typ.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
5/99
Embedded System
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