Ordering number : ENA1149
2SC6144
SANYO Semiconductors
DATA SHEET
2SC6144
Applications
•
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Relay drivers, lamp drivers, motor drivers.
Features
•
•
•
•
Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Ratings
60
50
5
10
13
2
2
25
150
--55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32608FA TI IM TC-00001285 No. A1149-1/4
2SC6144
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
Conditions
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=270mA
VCE=10V, IC=3A
VCB=10V, f=1MHz
IC=6A, IB=300mA
IC=6A, IB=300mA
IC=100μA, IE=0A
IC=1mA, RBE=∞
IE=100μA, IC=0A
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
60
50
5
62
350
25
200
330
60
180
360
1.2
Ratings
min
typ
max
10
10
560
MHz
pF
mV
V
V
V
V
ns
ns
ns
Unit
μA
μA
Package Dimensions
unit : mm (typ)
7508-002
10.0
3.2
3.5
7.2
4.5
2.8
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
VR
IB1
OUTPUT
IB2
RB
+
100μF
+
470μF
VCC=20V
RL
18.1
16.0
50Ω
1.6
1.2
0.75
14.0
0.7
VBE= --5V
5.6
IC=20IB1= --20IB2=5A
1 2 3
2.4
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML
2.55
2.55
100m
A
40mA
35mA
10
9
IC -- VCE
80
mA
25
mA
mA
60
40mA
35mA
5.0
IC -- VCE
A
18m
A
16m
A
2 0m
14mA
30mA
4.5
12mA
Collector Current, IC -- A
Collector Current, IC -- A
8
7
6
5
4
3
2
1
0
0
1
2
3
4
25mA
45
m
A
50mA
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20mA
10mA
8mA
15mA
10mA
A
30m
6mA
4m A
2m A
IB=0mA
0
0.5
1.0
1.5
2.0
IT13455
5m A
IB=0mA
5
IT13454
0
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No. A1149-2/4
2SC6144
25
IC -- VBE
VCE=2V
7
5
hFE -- IC
VCE=2V
Ta=75
°
C
Collector Current, IC -- A
20
DC Current Gain, hFE
3
25
°
C
2
15
--25
°
C
100
7
5
10
5
0
0
0.5
25
°
C
--25
°
C
Ta
=7
5
°
C
1.0
1.5
IT13456
3
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5
Base-to-Emitter Voltage, VBE -- V
5
Collector Current, IC -- A
7
IT13457
hFE -- IC
fT -- IC
VCE=10V
Ta=25°C
3
5
Gain-Bandwidth Product, fT -- MHz
2 3
5
3
2
=2.
V CE
DC Current Gain, hFE
2
0.
2V
V
0.5
0V
100
7
5
3
2
0.7V
100
7
5
1.0V
3
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
10
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5
IT13458
1.0
7
Cob -- VCB
Collector Current, IC -- A
5 7 10
IT13459
VCE(sat) -- IC
f=1MHz
IC / IB=20
Output Capacitance, Cob -- pF
3
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
0.1
7
5
3
2
0.01
7
5
0.01
100
7
5
3
2
0.1
2
3
5 7 1.0
2
3
5
7 10
2
3
5
7
2 3
5 7 0.1
2 3
--2
5
5 7 1.0
2 3
°
C
25
°
C
5 7 10
75
a=
T
°
C
2 3
5
Collector-to-Base Voltage, VCB -- V
1.0
7
IT13460
3
VCE(sat) -- IC
Collector Current, IC -- A
IT13461
VBE(sat) -- IC
IC / IB=50
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
1.0
0.1
7
5
3
2
0.01
0.01
Ta=
--25
°
C
7
5
C
°
C
5
°
25
=7
--
Ta
25
°
C
75
°
C
°
C
25
3
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
2
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector Current, IC -- A
IT13462
Collector Current, IC -- A
IT13463
No. A1149-3/4
2SC6144
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
Forward Bias A S O
ICP=13A
Collector Dissipation, PC -- W
IC=10A
10
s
1m
2.5
PC -- Ta
Collector Current, IC -- A
0m
2.0
μ
s
00
=5
PT
s
DC
ms
n
10
tio
era
op
1.5
No
he
at
1.0
sin
k
0.5
0.01
0.1
Tc=25
°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
0
5 7 100
IT13464
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
30
Ambient Temperature, Ta --
°C
IT13452
PC -- Tc
Collector Dissipation, PC -- W
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT13453
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1149-4/4
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