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FDD6782A

Description
20A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size1MB,7 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
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FDD6782A Overview

20A, 25V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3

FDD6782A Parametric

Parameter NameAttribute value
MakerRochester Electronics
Parts packaging codeTO-252
package instructionROHS COMPLIANT, DPAK-3
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)12 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage25 V
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.0105 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)100 A
Certification statusCOMMERCIAL
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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