KST4125MTF datasheet, PDF - EEWORLD Datasheet

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KST4125MTF: Descriptiontransistor pnp 30v 200ma sot-23; CategoryDiscrete semiconductor The transistor; File Size43KB，3 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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KST4125MTF Overview

transistor pnp 30v 200ma sot-23

KST4125MTF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Fairchild
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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KST4125

General Purpose Transistor

SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

=25°C unless otherwise noted

Symbol

CBO

CEO

EBO

STG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Storage Temperature

Parameter

Value

-30

-4

-200

350

150

Units

°C

•

Refer to KST3906 for graphs

Electrical Characteristics

=25°C unless otherwise noted

Symbol

CBO

CEO

EBO

CBO

EBO

(sat)

Parameter

Collector-Base Breakdown Voltage

* Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

* DC Current Gain

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

Test Condition

= -10µA, I

= -1mA, I

= -10µA, I

= -20V, I

= -3V, I

= -1V, I

= -2.0mA

= -1V, I

= -50mA

= -50mA, I

= -5.0mA

= -50mA, I

= -5.0mA

= -10mA, V

= -20V

f=100MHz

= -5V, I

=0, f=100KHz

= -100µA, V

= -5V

=1KΩ

f=10Hz to 15.7KHz

200

4.5

Min.

-30

-4

-50

150

-0.4

-0.95

MHz

Max.

Units

* Pulse Test: PW≤300µs, Duty Cycle≤2%

Marking

Rev. A2, November 2002

KST4125MTF Related Products

	KST4125MTF
Description	transistor pnp 30v 200ma sot-23
Is it Rohs certified?	conform to
Maker	Fairchild
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	30 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz

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