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ZTX614STOB

Description
transistor npn med pwr E-line
Categorysemiconductor    Discrete semiconductor   
File Size33KB,1 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
Environmental Compliance  
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transistor npn med pwr E-line

ZTX614STOB Parametric

Parameter NameAttribute value
Datasheets
ZTX614STOB
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package2,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
PackagingTape & Reel (TR)
Transistor TypeNPN - Darling
Current - Collector (Ic) (Max)800mA
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic1.25V @ 8mA, 800mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 500mA, 5V
Power - Max1W
Frequency - Transiti-
Mounting TypeThrough Hole
Package / CaseE-Line-3, Formed Leads
Supplier Device PackageE-Line (TO-92 compatible)
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 – APRIL 94
FEATURES
* 100 Volt V
CEO
* 800 mA continuous current
* Gain of 10K at I
C
=500mA
* P
tot
=1 Watt
ZTX614
C
B
E
REFER TO BCX38 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
derate above 25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
120
100
10
800
1.0
5.7
E-line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
W
mW/ °C
°C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
MIN.
120
100
10
100
100
1.25
1.8
5000
10000
TYP.
MAX.
UNIT
V
V
V
nA
nA
V
V
CONDITIONS.
I
C
=10
µ
A, I
E
=0
I
C
=10mA, I
B
=0*
I
E
=10
µ
A, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=8V, I
C
=0
I
C
=800mA, I
B
=8mA*
IC=800mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
V
CE(sat)
V
BE(on)
Static Forward Current h
FE
Transfer Ratio
*Measured under pulsed conditions. Pulse Width=300
µ
s. Duty cycle
2%
3-215

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Description transistor npn med pwr E-line transistor npn med pwr E-line
Standard Package 2,000 2,000
Category Discrete Semiconductor Products Discrete Semiconductor Products
Family Transistors (BJT) - Single Transistors (BJT) - Single
Packaging Tape & Reel (TR) Tape & Reel (TR)
Transistor Type NPN - Darling NPN - Darling
Current - Collector (Ic) (Max) 800mA 800mA
Voltage - Collector Emitter Breakdown (Max) 100V 100V
Vce Saturation (Max) @ Ib, Ic 1.25V @ 8mA, 800mA 1.25V @ 8mA, 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 500mA, 5V 10000 @ 500mA, 5V
Power - Max 1W 1W
Mounting Type Through Hole Through Hole
Package / Case E-Line-3, Formed Leads E-Line-3, Formed Leads
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible)
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