ITT332203AD datasheet, PDF - EEWORLD Datasheet

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ITT332203AD: Description1880MHz - 1900MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, PLASTIC, SOIC-16; CategoryWireless rf/communication Radio frequency and microwave; File Size51KB，5 Pages; ManufacturerTE Connectivity; Websitehttp://www.te.com

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ITT332203AD Overview

1880MHz - 1900MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, PLASTIC, SOIC-16

ITT332203AD Parametric

Parameter Name	Attribute value
Maker	TE Connectivity
Reach Compliance Code	unknown
Characteristic impedance	50 Ω
structure	COMPONENT
Maximum input power (CW)	7.78 dBm
Maximum operating frequency	1900 MHz
Minimum operating frequency	1880 MHz
RF/Microwave Device Types	NARROW BAND MEDIUM POWER
Maximum voltage standing wave ratio	10
Base Number Matches	1

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3.6V 450mW RF Power Amplifier IC for DECT

ITT332203AD

Applications

DECT

PCS

Personal Wireless Telephony (PWT)

Cordless PBX

Radio/Wireless Local Loop (RLL/WLL)

Features

•

Single Positive Supply

Class A Bias

1800 to 2000 MHz Operation

Ω

Input & Output Impedance

Small Size - 16 Pin Narrow Body SOIC Plastic Package

Self-Aligned MSAG -Lite MESFET Process

Guaranteed Stability and Ruggedness

N/C

DD1

GND

N/C

16 pin narrow body SOIC

N/C

DD2

GND

OUT

GND

N/C

Typical 3.6 Volt Performance

26.5 dBm Output Power

25.5 dB Power Gain

35% Power Added Efficiency

< -30 dBc 2

Harmonic

< -50 dBc 3

, 4

, 5

Harmonics

MAXIMUM RATINGS

= 25 °C unless otherwise noted)

Rating

DC Supply Voltage

(Pins 2 & 15)

RF Input Power

Junction Temperature

Storage Temperature Range

Symbol

STG

Value

5.5

150

-40 to +150

Unit

Vdc

°C

ELECTRICAL CHARACTERISTICS

=3.6 V, P

=+2 dBm, T

=40 °C (Note 1), 50

Ω

System.

Characteristic

Frequency Range

Output Power

= 0 to +4 dBm)

Isolation, PA Off

= 0.0 V)

Frequency Dependency

Current Consumption

Input VSWR, PA On

(50

Ω

Ref.)

Input VSWR, PA Off

= 0.0 V), 50

Ω

Ref.

Thermal Resistance

(Junction of 2nd stage FET to pin 11, Duty Cycle=50%)

Load Mismatch

= 4.6 V, VSWR = 10:1, P

= 7 dBm)

Stability

=-3 to +7 dBm, V

=0-4.6 V, 0 mW < P

OUT

< 450 mW, T

=-40 to +75

°C,

Symbol

—

OUT

—

OUT

—

TH J-S

—

Min

1880

25.5

—

Typ

—

26.5

—

0.2

350

1.6:1

1.4:1

—

Max

1900

27.5

—

0.5

420

2.0:1

Unit

MHz

dBm

—

°C/W

Load VSWR = 10:1)

Note 1: T

is the temperature measured at the soldering point of pin 11, mounted on 60 mil GETEK evaluation board in a free air condition with

ambient room temperature T

=25°C. The electrical data presented herein was taken with the evaluation board shown in Figures 1 & 10,

under room temperature conditions and CW operation at V

BAT

= 3.6 V, unless otherwise specified.

Specifications Subject to Change Without Notice

No Degradation in Power Output

All non-harmonically related outputs

more than 60 dB below desired signal

900690 F, November 1999

GaAsTEK

5310 Valley Park Drive

Roanoke, VA 24019 USA

www.gaastek.com

Tel: 1-540-563-3949

1-888-563-3949 (USA)

Fax: 1-540-563-8616

ITT332203AD Related Products

	ITT332203AD
Description	1880MHz - 1900MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER, PLASTIC, SOIC-16
Maker	TE Connectivity
Reach Compliance Code	unknown
Characteristic impedance	50 Ω
structure	COMPONENT
Maximum input power (CW)	7.78 dBm
Maximum operating frequency	1900 MHz
Minimum operating frequency	1880 MHz
RF/Microwave Device Types	NARROW BAND MEDIUM POWER
Maximum voltage standing wave ratio	10
Base Number Matches	1

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