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JANTX2N6274

Description
Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
CategoryDiscrete semiconductor    The transistor   
File Size43KB,1 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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JANTX2N6274 Overview

Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin

JANTX2N6274 Parametric

Parameter NameAttribute value
MakerVishay
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)50 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment250 W
Certification statusNot Qualified
GuidelineMIL
surface mountNO
Terminal surfaceNOT SPECIFIED
Terminal formPIN/PEG
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
Maximum off time (toff)1050 ns
VCEsat-Max3 V
Base Number Matches1

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Description Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin Power Bipolar Transistor, 50A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin Power Bipolar Transistor, 50A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin Power Bipolar Transistor, 50A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin Power Bipolar Transistor, 50A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin
package instruction FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code unknown unknow unknow unknow unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 50 A 50 A 50 A 50 A 50 A 50 A
Collector-emitter maximum voltage 100 V 100 V 150 V 150 V 150 V 100 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 10 10 10 10 10 10
JEDEC-95 code TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE TO-204AE
JESD-30 code O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C 200 °C
Package body material METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power consumption environment 250 W 250 W 250 W 250 W 250 W 250 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Guideline MIL MIL MIL MIL MIL MIL
surface mount NO NO NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 30 MHz 30 MHz 30 MHz 30 MHz 30 MHz 30 MHz
Maximum off time (toff) 1050 ns 1050 ns 1050 ns 1050 ns 1050 ns 1050 ns
VCEsat-Max 3 V 3 V 3 V 3 V 3 V 3 V
Base Number Matches 1 1 1 1 1 1
Terminal surface NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
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