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B0202AG-03-2000-F

Description
Fixed Resistor, Thin Film, 0.25W, 200ohm, 100V, 1% +/-Tol, 25ppm/Cel, Surface Mount, 0202, CHIP
CategoryPassive components    The resistor   
File Size381KB,3 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

B0202AG-03-2000-F Overview

Fixed Resistor, Thin Film, 0.25W, 200ohm, 100V, 1% +/-Tol, 25ppm/Cel, Surface Mount, 0202, CHIP

B0202AG-03-2000-F Parametric

Parameter NameAttribute value
Objectid1579364292
package instructionCHIP
Reach Compliance Codecompliant
ECCN codeEAR99
Installation featuresSURFACE MOUNT
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package shapeRECTANGULAR PACKAGE
method of packingTRAY
Rated power dissipation(P)0.25 W
Rated temperature70 °C
resistance200 Ω
Resistor typeFIXED RESISTOR
size code0202
surface mountYES
technologyTHIN FILM
Temperature Coefficient25 ppm/°C
Terminal shapeONE SURFACE
Tolerance1%
Operating Voltage100 V
Wire Bondable
Chip Resistors
WBC Series
Discrete or tapped schematics
MIL inspection available
High resistor density
IRC’s WBC series wire bondable chip resistors are ideally suited for
the most demanding hybrid application. The WBC combines IRC’s
TaNSil
®
tantalum nitride thin film technology with silicon substrate processing to produce an extremely small
footprint device with the proven stability, reliability and moisture performance of IRC’s TaNSil
®
resistor film.
Available in a wide range of tolerances and temperature coefficients to fit a variety of hybrid circuit applica-
tions. Custom resistance values, sizes and schematics are available on request from the factory.
Physical Data
R0202 - Discrete
(0.508mm ±0.025)
0.020˝ ±0.001
Electrical Data
Absolute Tolerance
Absolute TCR
Package Power Rating
(@ 70°C)
Rated Operating Voltage
(not to exceed P x R )
Operating Temperature
Back contact
Noise
R
Top contact
pad chamfered
0.004˝ min bond pad size
to ±0.1%
to ±25ppm/°C
250mW
100V
-55°C to +150°C
<-30dB
Oxidized Silicon
(10KÅ SiO
2
min)
0.010˝ ±0.001
(0.254mm ±0.025)
10KÅ minimum
15KÅ minimum
Silicon
(Al / Au optional)
3KÅ Au minimum
10KÅ Al minimum
Silicon Dioxide or
Silicon Nitride
R
0.004˝ min bond pad size
0.020˝ ±0.001
(0.508mm ±0.025)
B0202 - Discrete back contact
(0.508mm ±0.025)
0.020˝ ±0.001
Substrate Material
Top contact
Substrate Thickness
Aluminum
Gold
R0202 and
T0303
B0202
0.020˝ ±0.001
(0.508mm ±0.025)
T0303 - Tapped network ½R + ½R
Bond Pad
Metallization
(0.762mm ±0.025)
0.030˝ ±0.001
½R
½R
Backside
0.030˝ ±0.001
(0.762mm ±0.025)
0.004˝ min bond pad size
Passivation
General Note
IRC reserves the right to make changes in product specification without notice or liability.
All information is subject to IRC’s own data and is considered accurate at time of going to print.
© IRC Advanced Film Division
• Corpus Christi Texas 78411 USA
Telephone: 361 992 7900 • Facsimile: 361 992 3377 • Website: www.irctt.com
A subsidiary of
TT electronics plc
WBC Series Issue January 2009 Sheet 1 of 3
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