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BZX85C110-T

Description
Zener Diode,
CategoryDiscrete semiconductor    diode   
File Size120KB,6 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance
Download Datasheet Parametric View All

BZX85C110-T Overview

Zener Diode,

BZX85C110-T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerRectron Semiconductor
package instructionO-LALF-W2
Reach Compliance Codecompliant
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.3 W
Nominal reference voltage110 V
surface mountNO
technologyZENER
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current2.7 mA
Base Number Matches1
SILICON ZENER DIODE
BZX85C2V7
THRU
BZX85C200
VOLTAGE
2.7 to 200
Volts POWER
1.3 Watts
FEATURES
*
Low profile package
*
B uilt-in strain relief
*
Low inductance
*
High temperature soldering : 260°C /10 seconds
*
In compliance with EU RoHS 2002/95/EC directives
1. 0(26. 0)MI N.
DO-41G
*
Glass package has Underwriters Laboratory Flammability Classification
0.030(0.75)
0.026(0.65)
MECHANICAL DATA
• Case: Molded Glass DO-41G
• Terminals: Axial leads, solderable per MIL-STD-750, Method 2026
guaranteed
• Polarity: Color band denotes positive end
• Mounting position:Any
• Weight: 0.012 ounce, 0.317 gram
1. 0(26. 0)MI N.
0. 177( 4. 5)
0 . 13 8 ( 3 . 5 )
0.107(2.7)
0.080(2.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
O
Symbol
Value
1.3*
-65 to +200
-65 to +200
Units
W
O
C
P
TOT
T
J
T
STG
C
C
O
*Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at I
F
= 200mA
Symbol
Min.
Typ.
Max.
170
Uni ts
K/ W
R
JA
--
--
--
--
V
F
1.2
V
Vali d provi ded that leads at a di stance of 10 mm from case are kept at ambi ent temperatur
.e
2019-02/09
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