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CDLL645

Description
0.4 A, SILICON, SIGNAL DIODE, DO-213AA
Categorysemiconductor    Discrete semiconductor   
File Size31KB,2 Pages
ManufacturerCDI-DIODE
Websitehttp://www.cdi-diodes.com
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CDLL645 Overview

0.4 A, SILICON, SIGNAL DIODE, DO-213AA

• AVAILABLE IN
JAN, JANTX
AND
JANTXV
PER MIL-PRF-19500/240
• SILICON RECTIFIER
• METALLURGICALLY BONDED
1N645UR-1
CDLL645
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 400 mA @ 25ºC
150 mA @ 150ºC
Derating: 2.0mA/°C between 25ºC to 150ºC
6.0mA/°C between 150ºC to 175ºC
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
VRSM
TYPE
V(pk)
CDLL, 1N645UR-1
270
V(pk)
225
VRWM
I FSM
TP=1/120 s
TA=25ºC
A
5
VF
@400mA
VDC
0.8 -1.0
CAP
@ VR
=4V
PF
2.0
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
D
1.60
1.70 0.063 0.067
F
0.41
0.55 0.016 0.022
G
3.30
3.70 .130 .146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
FIGURE 1
DESIGN DATA
TYPE
IR1 at VRWM IR2 at VRWM
TA=25ºC
TA = 150°C
IR3 at VRSM
TA=25ºC
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
100 ˚C/W maximum
THERMAL IMPEDANCE: (Z
OJX): 35
˚C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING POSITION:
Any.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
µ
A
CDLL, 1N645UR-1
0.05
µ
A
25
µ
A
50
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
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