SMD Fast Recovery Rectifier
COMCHIP
www.comchiptech.com
CFRL101 Thru CFRL107
Reverse Voltage: 50 - 1000 Volts
Forward Current: 1.0 Amp
Features
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Fast recovery time: 150 - 500 nS
Low leakage current
DO-213AB (Plastic Melf)
0.022(0.55)
Max.
0.205(5.2)
0.195(4.8)
Mechanical data
Case: DO-213AB molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight: 0.116 gram
0.105(2.67)
0.095(2.40)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics
Parameter
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
Max. Average Forward Current
Max. Instantaneous Forward Current
at 1.0 A
Reverse recovery time
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25
C
Ta=100
C
Max. Thermal Resistance (Note 1)
Operating Junction Temperature
Storage Temperature
Symbol
V
RRM
V
DC
V
RMS
I
FSM
CFRL
101
50
50
35
CFRL
102
100
100
70
CFRL
103
200
200
140
CFRL
104
400
400
280
CFRL
105
600
600
420
CFRL
106
800
800
560
CFRL
107
1000
1000
700
Unit
V
V
V
A
30
Io
V
F
Trr
I
R
R
100
1.0
1.3
250
5.0
50
42
-55 to +150
-55 to +150
500
A
V
nS
uA
JA
C/W
C
C
Tj
T
STG
Note 1: Thermal resistance from junction to ambient.
MDS0210005B
Page 1
SMD Fast Recovery Rectifier
COMCHIP
www.comchiptech.com
Rating and Characteristic Curves (CFRL101 Thru CFRL107)
Fig. 1 - Reverse Characteristics
1000
100
Fig.2 - Forward Characteristics
Reverse Current ( uA )
Tj=125 C
Forward current ( A )
100
10
10
1
1.0
Tj=25 C
0.1
Tj=25 C
Pulse width 300uS
4% duty cycle
0.1
0
0.01
20
40
60
80
100 120
140
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
35
50
Fig. 4 - Non Repetitive Forward
Surge Current
Peak Surge Forward Current ( A )
8.3mS Single Half Sine
Wave JEDEC methode
Junction Capacitance (pF)
30
25
20
15
10
5
0
0.01
0.1
=1MHz and applied
4VDC reverse voltage
40
30
Tj=25 C
20
10
0
1.0
10
100
1
5
10
50
1 00
Reverse Voltage (V)
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Di
agram and Reverse Recovery Time Characteristics
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
+0.5A
Fig. 6 - Current Derating Curve
1.4
Average Forward Current ( A )
trr
|
|
|
|
|
|
|
|
1.2
1.0
0.8
0.6
0.4
0.2
00
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
Single Phase
Half Wave 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
25
50
75
100
125
150
175
Ambient Temperature ( C)
MDS0210005B
Page 2
Microcontroller MCU
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