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934068217115

Description
TRANS PNP 140V 4A SOT223
CategoryDiscrete semiconductor    The transistor   
File Size710KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric Compare View All

934068217115 Overview

TRANS PNP 140V 4A SOT223

934068217115 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerNexperia
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codecompliant
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)4 A
Collector-emitter maximum voltage140 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
GuidelineAEC-Q101; IEC-60134
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PBHV9414Z
24 January 2014
140 V, 4 A PNP high-voltage low VCEsat (BISS) transistor
Product data sheet
1. General description
PNP high-voltage low V
CEsat
Breakthrough Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
High voltage
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain h
FE
at high I
C
AEC-Q101 qualified
3. Applications
LED driver for LED chain module
LCD backlighting
Automotive motor management
Switch Mode Power Supply (SMPS)
4. Quick reference data
Table 1.
Symbol
V
CEO
I
C
I
CM
R
CEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter
saturation resistance
single pulse; t
p
≤ 1 ms
I
C
= -1 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
Conditions
open base
Min
-
-
-
-
Typ
-
-
-
100
Max
-140
-4
-10
150
Unit
V
A
A

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