GaAs FET
q
q
q
q
q
CFY 25
Low noise
High gain
For front-end amplifiers
lon-implanted planar structure
All gold metallization
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
CFY 25-17
CFY 25-20
CFY 25-23
Marking
C5
C6
C7
Ordering Code
(tape and reel)
Q62703-F106
Q62703-F107
Q62703-F108
Pin Configuration
1
2
3
4
D
S
G
S
Package
1)
Micro-X
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Total power dissipation,
T
S
≤
56 ˚C
2)
Channel temperature
Storage temperature range
Thermal Resistance
Channel - soldering point
2)
R
th chS
375
K/W
Symbol
V
DS
V
DG
V
GS
I
D
P
tot
T
ch
T
stg
Values
5
7
–5…+0
80
250
150
– 65 … + 150
mA
mW
˚C
Unit
V
1)
2)
For detailed information see chapter Package Outlines.
T
S
is measured on the source lead at the soldering point to the pcb.
Semiconductor Group
1
07.94
CFY 25
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Drain-source saturation current
V
DS
= 3 V,
V
GS
= 0
Pinch-off voltage
I
D
= 1 mA,
V
DS
= 3 V
Gate leakage current
I
D
= 15 mA,
V
DS
= 3 V
Transconductance
I
D
= 15 mA,
V
DS
= 3 V
Noise figure
I
DS
= 15 mA,
V
DS
= 3 V,
f
= 12 GHz CFY 25-17
CFY 25-20
CFY 25-23
Associated gain
I
DS
= 15 mA,
V
DS
= 3 V,
f
= 12 GHz CFY 25-17
CFY 25-20
CFY 25-23
Symbol
min.
I
DSS
V
p
I
G
g
m
F
–
–
–
G
a
9
8.5
8.5
9.5
9
9
–
–
–
1.6
1.9
2.2
1.7
2.0
2.3
15
– 0.3
–
30
Values
typ.
30
– 1.0
0.1
40
max.
60
– 3.0
2
–
mA
V
µ
A
Unit
mS
dB
Semiconductor Group
2
CFY 25
Common Source Noise Parameters
f
GHz
F
min
dB
G
a
dB
Γ
opt
MAG
ANG
R
N
Ω
r
N
–
N
–
F
50
Ω
dB
G(F
50
Ω
)
dB
I
D
= 15 mA,
V
DS
= 3.0 V,
Z
0
= 50
Ω
2
4
6
8
10
12
14
0.60
0.77
1.00
1.25
1.55
1.77
2.15
18.5
14.6
12.4
11.0
9.8
9.0
8.1
0.70
0.59
0.50
0.47
0.45
0.43
0.41
31
63
103
140
174
– 156
– 130
29
21
13
7.3
5.6
7.1
18
0.580
0.420
0.260
0.146
0.112
0.142
0.360
0.10
0.14
0.19
0.23
0.28
0.29
0.46
2.0
1.8
1.8
2.0
2.4
2.5
3.0
11.4
10.5
9.3
8.2
7.3
6.4
5.8
Source impedance for min. noise figure
I
D
= 15 mA,
V
DS
= 3 V
Circles of constant noise figure
I
D
= 15 mA,
V
DS
= 3 V,
f
= 12 GHz
Semiconductor Group
4
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