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CGY0918

Description
GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package)
CategoryWireless rf/communication    Radio frequency and microwave   
File Size45KB,4 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

CGY0918 Overview

GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package)

CGY0918 Parametric

Parameter NameAttribute value
MakerSIEMENS
Reach Compliance Codeunknown
structureCOMPONENT
Gain28 dB
Maximum operating frequency1785 MHz
Minimum operating frequency880 MHz
RF/Microwave Device TypesNARROW BAND HIGH POWER
Base Number Matches1
CGY 0918
GaAs MMIC
l
l
l
l
Dual band GSM/PCN power amplifier
35dBm / 34dBm output power at 3.5 V
Two amplifiers in a single package
Power ramp control
ESD:
Electrostatic discharge
sensitive device,
observe handling precautions!
Type
Marking
Ordering code
(taped)
Package
CGY 0918
CGY 0918
Q62702G0077
MW 16
Maximum ratings
Characteristics
Positive supply voltage
Supply current
Channel temperature
Storage temperature
Pulse peak power dissipation
duty cycle 12.5%, ton=0.577ms
Total power dissipation
(Ts
80 °C)
Ts: Temperature at soldering point
Thermal Resistance
Characteristics
Channel-soldering point
Symbol
max. Value
tbd
Unit
K/W
Symbol
VD
max. Value
9
4
150
-55...+150
tbd
tbd
Unit
V
A
°C
°C
W
W
ID
TCh
Tstg
PPulse
Ptot
RthChS
Siemens Aktiengesellschaft
Semiconductor Group
1
1
23.07.98
1998-11-01
HL HF PE GaAs

CGY0918 Related Products

CGY0918 Q62702G0077
Description GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) GaAs MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package)

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