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BU1006-M3/51

Description
rectifier bridge 600v 10a BU
Categorysemiconductor    Analog mixed-signal IC   
File Size116KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
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BU1006-M3/51 Overview

rectifier bridge 600v 10a BU

BU1006-M3/51 Parametric

Parameter NameAttribute value
Datasheets
BU1006-M3,1008-M3,1010-M3
Standard Package250
CategoryDiscrete Semiconductor Products
FamilyBridge Rectifiers
BU1006, BU1008, BU1010
www.vishay.com
Vishay General Semiconductor
Enhanced isoCink+™ Bridge Rectifiers
isoCink+™
FEATURES
• UL recognition file number E312394
• Thin single in-line package
• Glass passivated chip junction
• Available for BU-5S lead forming option (part
number with “5S” suffix, e.g. BU10065S)
• Superior thermal conductivity
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
+
~
~
-
-
~
~
+
Available
Case Style BU
TYPICAL APPLICATIONS
+
~
~
-
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances and
white-goods applications.
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 5.0 A
T
J
max.
Circuit configuration
BU
10 A
600 V, 800 V, 1000 V
120 A
5 μA
0.88 V
150 °C
In-line
MECHANICAL DATA
Case:
BU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 1A whisker test
Polarity:
as marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Average rectified forward current (Fig. 1, 2)
Non-repetitive peak forward surge current
8.3 ms single sine-wave, T
J
= 25 °C
Rating for fusing (t < 8.3 ms) T
J
= 25 °C
Operating junction and storage temperature range
Notes
(1)
With 60 W air cooled heatsink
(2)
Without heatsink, free air
T
C
= 92 °C
(1)
T
A
= 25 °C
(2)
SYMBOL
V
RRM
I
O
I
FSM
I
2
t
T
J
, T
STG
BU1006
600
BU1008
800
10
3.2
120
60
-55 to +150
BU1010
1000
UNIT
V
A
A
A
2
s
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage per diode
(1)
Maximum reverse current per diode
Typical junction capacitance per diode
TEST CONDITIONS
I
F
= 5.0 A
rated V
R
4.0 V, 1 MHz
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
F
I
R
C
J
TYP.
0.98
0.88
-
64
43
MAX.
1.05
0.95
5.0
250
-
UNIT
V
μA
pF
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Revision: 29-Aug-17
Document Number: 84801
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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