BU1208-M3/45 datasheet, PDF - EEWORLD Datasheet

BU1206, BU1208, BU1210

www.vishay.com

Vishay General Semiconductor

Enhanced isoCink+™ Bridge Rectifiers

isoCink+™

FEATURES

• UL recognition file number E312394

• Thin single in-line package

• Glass passivated chip junction

• Available for BU-5S lead forming option

(part number with “5S” suffix, e.g. BU12065S)

• Superior thermal conductivity

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see

www.vishay.com/doc?99912

+

~

-

~

+

Available

Case Style BU

TYPICAL APPLICATIONS

+

~

-

General purpose use in AC/DC bridge full wave rectification

for switching power supply, home appliances and

white-goods applications.

PRIMARY CHARACTERISTICS

Package

I

F(AV)

V

RRM

I

FSM

I

R

V

F

at I

F

= 6 A

T

J

max.

Circuit configuration

BU

12 A

600 V, 800 V, 1000 V

150 A

5 μA

0.88 V

150 °C

In-line

MECHANICAL DATA

Case:

BU

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

Terminals:

matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 and M3 suffix meet JESD 201 class 1A whisker test

Polarity:

as marked on body

Mounting Torque:

10 cm-kg (8.8 inches-lbs) max.

Recommended Torque:

5.7 cm-kg (5 inches-lbs)

MAXIMUM RATINGS

(T

A

= 25 °C unless otherwise noted)

PARAMETER

Maximum repetitive peak reverse voltage

Average rectified forward current (Fig. 1, 2)

Non-repetitive peak forward surge current

8.3 ms single sine-wave, T

J

= 25 °C

Rating for fusing (t < 8.3 ms) T

J

= 25 °C

Operating junction and storage temperature range

Notes

(1)

With 60 W air cooled heatsink

(2)

Without heatsink, free air

T

C

= 85 °C

T

A

= 25 °C

(1)

(2)

SYMBOL

V

RRM

I

O

I

FSM

I

2

t

T

J

, T

STG

BU1206

600

BU1208

800

12

3.4

150

93

-55 to +150

BU1210

1000

UNIT

V

A

2

s

°C

ELECTRICAL CHARACTERISTICS

(T

A

= 25 °C unless otherwise noted)

PARAMETER

Maximum instantaneous forward

voltage per diode

(1)

Maximum reverse current per diode

Typical junction capacitance per diode

TEST CONDITIONS

I

F

= 6.0 A

Rated V

R

4.0 V, 1 MHz

T

A

= 25 °C

T

A

= 125 °C

T

A

= 25 °C

T

A

= 125 °C

SYMBOL

V

F

I

R

C

J

TYP.

0.98

0.88

-

74

50

MAX.

1.05

0.95

5.0

250

-

UNIT

V

μA

pF

Note

(1)

Pulse test: 300 μs pulse width, 1 % duty cycle

Revision: 29-Aug-17

Document Number: 84802

1

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

BU1206, BU1208, BU1210

www.vishay.com

Vishay General Semiconductor

THERMAL CHARACTERISTICS

(T

A

= 25 °C unless otherwise noted)

PARAMETER

Typical thermal resistance

Notes

(1)

With 60 W air cooled heatsink

(2)

Without heatsink, free air

SYMBOL

R

JC

(1)

R

JA

(2)

BU1206

BU1208

2.7

20

BU1210

UNIT

°C/W

ORDERING INFORMATION

(Example)

PREFERRED P/N

BU1206-E3/45

BU1206-E3/51

BU1206-M3/45

BU12065S-E3/45

UNIT WEIGHT (g)

4.66

PREFERRED PACKAGE CODE

45

51

45

BASE QUANTITY

20

250

20

DELIVERY MODE

Tube

Paper tray

Tube

RATINGS AND CHARACTERISTICS CURVES

(T

A

= 25 °C unless otherwise specified)

14

30

Average Forward Output Current (A)

12

10

8

6

4

2

0

20

40

60

80

100

120

140

160

With Heatsink

Sine-Wave, R-Load

T

C

Measured at Device Bottom

T

C

T

C

Forward Power Dissipation (W)

25

20

15

10

5

0

2

4

6

8

10

12

14

Case Temperature (°C)

Average Forward Current (A)

Fig. 1 - Derating Curve Output Rectified Current

Fig. 3 - Forward Power Dissipation

5

100

Average Forward Rectified Current (A)

Instantaneous Forward Current (A)

4

T

J

= 150 °C

10

T

J

= 125 °C

1

T

J

= 25 °C

0.1

3

2

1

Without Heatsink

Sine-Wave, R-Load

Free Air, T

A

0

25

50

75

100

125

150

0

0.01

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

Ambient Temperature (°C)

Instantaneous Forward Voltage (V)

Fig. 2 - Forward Current Derating Curve

Fig. 4 - Typical Forward Characteristics Per Diode

Revision: 29-Aug-17

Document Number: 84802

2

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

BU1206, BU1208, BU1210

www.vishay.com

Vishay General Semiconductor

100

1000

Instantaneous Reverse Current (µA)

T

J

= 150 °C

100

T

J

= 125 °C

10

1

0.1

T

J

= 25 °C

Junction Capacitance (pF)

10

0.01

10

20

30

40

50

60

70

80

90

100

0.1

1

10

100

Percent of Rated Peak Reverse Voltage (%)

Reverse Voltage (V)

Fig. 5 - Typical Reverse Characteristics Per Diode

Fig. 6 - Typical Junction Capacitance Per Diode

PACKAGE OUTLINE DIMENSIONS

in inches (millimeters)

Case Type BU

0.880 (22.3)

0.860 (21.8)

0.020R (TYP.)

0.125 (3.2) x 45°

Chamfer

0.160 (4.1)

0.140 (3.5)

0.310 (7.9)

0.290 (7.4)

0.740 (18.8)

0.720 (18.3)

0.085 (2.16)

0.065 (1.65)

5°

TYP.

0.048 (1.23)

0.039 (1.00)

0.710 (18.0)

0.690 (17.5)

0.050 (1.27)

0.040 (1.02)

0.100 (2.54)

0.085 (2.16)

9°

TYP.

0.161 (4.10)

0.142 (3.60)

View A

0.080 (2.03)

0.060 (1.52)

0.075

(1.9) R

+

~

-

0.190 (4.83)

0.210 (5.33)

0.080 (2.03)

0.065 (1.65)

0.028 (0.72)

0.020 (0.52)

Polarity

shown

on front

side

of case, positive lead beveled corner

0.055 (1.385) REF.

0.094 (2.39) x 45° REF.

R 0.11

(2.78) REF.

0.64 (16.28) REF.

0.62 (15.78) REF.

R 0.10

(2.60) REF.

0.055 (1.385) REF.

Revision: 29-Aug-17

Document Number: 84802

3

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

BU1206, BU1208, BU1210

www.vishay.com

FORMING SPECIFICATION: BU-5S

in inches (millimeters)

0.161 (4.10)

0.142 (3.60)

0.880 (22.3)

0.860 (21.8)

0.125 (3.2) x 45°

Chamfer

0.020R (TYP.)

0.310 (7.9)

0.290 (7.4)

0.740 (18.8)

0.720 (18.3)

0.085 (2.16)

0.065 (1.65)

~

-

0.100 (2.54)

0.085 (2.16)

0.219 (5.55)

MAX.

0.315 (8.0)

0.276 (7.0)

5°

TYP.

9°

TYP.

Vishay General Semiconductor

0.160 (4.1)

0.140 (3.5)

0.075

(1.9) R

0.080 (2.03)

0.060 (1.52)

+

0.050 (1.27)

0.040 (1.02)

0.213 (5.40)

0.173 (4.40)

0.417 (10.60)

0.370 (9.40)

0.134 (3.40)

0.087 (2.20)

0.319 (8.10)

0.272 (6.90)

0.319 (8.10)

0.272 (6.90)

0.028 (0.72)

0.020 (0.52)

0.080 (2.03)

0.065 (1.65)

APPLICATION NOTE

1. Device UL approved for safety use dielectric strength of 1500 V

2. If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.

3. Heat sink shape recommendation:

(3)

Heatsink

2.5 mm MIN.

By

Safety

Requirements

Revision: 29-Aug-17

Document Number: 84802

4

For technical questions within your region:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer



ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other

disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or

the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all

liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,

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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of

typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding

statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a

particular product with the properties described in the product specification is suitable for use in a particular application.

Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over

time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s

technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,

including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining

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Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.

Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for

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Revision: 08-Feb-17

1

Document Number: 91000

Parameter Name	Attribute value
Datasheets
BU1206-M3,1208-M3,1210-M3
Standard Package	20
Category	Discrete Semiconductor Products
Family	Bridge Rectifiers

	BU1208-M3/45	BU1208-M3/51	BU1210-M3/51	MX3RHFB64M0	BU1206-M3/45	BU1210-M3/45
Description	rectifier bridge 800v 12a BU	rectifier bridge 800v 12a BU	rectifier bridge 1000v 12a BU	Quartz Crystal,	rectifier bridge 600v 12a BU	rectifier bridge 1000v 12a BU
package instruction	-	-	R-PSFM-T4	SMD, 4 PIN	R-PSFM-T4	R-PSFM-T4
Reach Compliance Code	-	-	unknow	unknown	unknow	unknow
Maximum operating temperature	-	-	150 °C	70 °C	150 °C	150 °C
surface mount	-	-	NO	YES	NO	NO

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