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IRF720STRR

Description
mosfet N-CH 400v 3.3A d2pak
CategoryDiscrete semiconductor    The transistor   
File Size184KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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IRF720STRR Overview

mosfet N-CH 400v 3.3A d2pak

IRF720STRR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)190 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)3.3 A
Maximum drain current (ID)3.3 A
Maximum drain-source on-resistance1.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)13 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRF720S, SiHF720S, IRF720L, SiHF720L
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
20
3.3
11
Single
D
FEATURES
400
1.8
Surface mount
Available in tape and reel
Dynamic dV/dt rating
Available
Repetitive avalanche rated
Fast switching
Ease of paralleling
Available
Simple drive requirements
Material categorization: for definitions of
compliance please see
www.vishay.com/doc?99912
I
2
PAK
(TO-262)
D
2
PAK (TO-263)
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
G
G
D
S
D
S
G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
D
2
PAK (TO-263)
SiHF720STRR-GE3
a
IRF720STRRPbF
a
D
2
PAK (TO-263)
SiHF720STRL-GE3
a
IRF720STRLPbF
I
2
PAK (TO-262)
SiHF720L-GE3
IRF720LPbF
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D
2
PAK (TO-263)
SiHF720S-GE3
IRF720SPbF
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
a
SYMBOL
V
DS
V
GS
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
mount)
e
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
400
± 20
3.3
2.1
13
0.40
0.025
190
3.3
5.0
50
3.1
4.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Single Pulse Avalanche Energy
b
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 30 mH, R
g
= 25
,
I
AS
= 3.3 A (see fig. 12).
c. I
SD
3.3 A, dI/dt
65 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S15-1659-Rev. E, 20-Jul-15
Document Number: 91044
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

IRF720STRR Related Products

IRF720STRR IRF720L IRF720STRL
Description mosfet N-CH 400v 3.3A d2pak MOSFET N-CH 400V 3.3A TO-262 MOSFET N-CH 400V 3.3A D2PAK
Is it Rohs certified? incompatible incompatible incompatible
package instruction SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknow unknown unknown
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 400 V 400 V 400 V
Maximum drain current (ID) 3.3 A 3.3 A 3.3 A
Maximum drain-source on-resistance 1.8 Ω 1.8 Ω 1.8 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSSO-G2 R-PSFM-T3 R-PSSO-G2
Number of components 1 1 1
Number of terminals 2 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE FLANGE MOUNT SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED 225
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 13 A 13 A 13 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES NO YES
Terminal form GULL WING THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Contacts 3 - 3
Avalanche Energy Efficiency Rating (Eas) 190 mJ - 190 mJ
Maximum drain current (Abs) (ID) 3.3 A - 3.3 A
JEDEC-95 code TO-263AB TO-220AB -
Maximum operating temperature 150 °C - 150 °C
Maximum power dissipation(Abs) 50 W - 50 W
Base Number Matches 1 - 1
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