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IRFS7730TRLPBF

Description
mosfet N-CH 75v 195a d2pak
Categorysemiconductor    Discrete semiconductor   
File Size673KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
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IRFS7730TRLPBF Overview

mosfet N-CH 75v 195a d2pak

IRFS7730TRLPBF Parametric

Parameter NameAttribute value
Datasheets
IRF(B,S,SL)7730PbF
Standard Package800
CategoryDiscrete Semiconductor Products
FamilyFETs - Single
StrongIRFET™
IRFB7730PbF
IRFS7730PbF
IRFSL7730PbF
Application
Brushed motor drive applications
BLDC motor drive applications

Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
HEXFET
®
Power MOSFET
 
D
V
DSS
R
DS(on)
typ.
max
75V
2.2m
2.6m
246A
195A
G
S
I
D (Silicon Limited)
I
D (Package Limited)
D
D
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
S
D
G
TO-220AB
IRFB7730PbF
S
G
D2Pak
IRFS7730PbF
G
S
D
TO-262
IRFSL7730PbF
G
Gate
D
Drain
S
Source
Base part number
IRFB7730PbF
IRFSL7730PbF
IRFS7730PbF
Package Type
TO-220
TO-262
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB7730PbF
IRFSL7730PbF
IRFS7730PbF
IRFS7730TRLPbF
RDS(on), Drain-to -Source On Resistance (m
)
8
ID = 100A
6
T J = 125°C
4
ID, Drain Current (A)
250
Limited by package
200
150
100
2
T J = 25°C
0
4
6
8
10
12
14
16
18
20
50
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
1
www.irf.com
© 2014 International Rectifier
Fig 2.
Maximum Drain Current vs. Case Temperature
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