K4B2G1646E-BCNB0 datasheet, PDF

K4B2G1646E-BCNB0: DescriptionDDR DRAM, 128MX16, 0.18ns, CMOS, PBGA96; Categorystorage storage; File Size2MB，65 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4B2G1646E-BCNB0 Overview

DDR DRAM, 128MX16, 0.18ns, CMOS, PBGA96

Parameter Name	Attribute value
Objectid	114174974
package instruction	FBGA, BGA96,9X16,32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	0.18 ns
Maximum clock frequency (fCLK)	1066 MHz
I/O type	COMMON
interleaved burst length	8
JESD-30 code	R-PBGA-B96
memory density	2147483648 bit
Memory IC Type	DDR DRAM
memory width	16
Number of terminals	96
word count	134217728 words
character code	128000000
Maximum operating temperature	85 °C
Minimum operating temperature
organize	128MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA96,9X16,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
power supply	1.5 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	8
Maximum standby current	0.01 A
Maximum slew rate	0.205 mA
Nominal supply voltage (Vsup)	1.5 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

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