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K4B2G1646Q-BCH9T

Description
DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96
Categorystorage    storage   
File Size2MB,67 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance
Download Datasheet Parametric View All

K4B2G1646Q-BCH9T Overview

DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96

K4B2G1646Q-BCH9T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid114267283
package instructionFBGA, BGA96,9X16,32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time0.255 ns
Maximum clock frequency (fCLK)667 MHz
I/O typeCOMMON
interleaved burst length8
JESD-30 codeR-PBGA-B96
memory density2147483648 bit
Memory IC TypeDDR DRAM
memory width16
Number of terminals96
word count134217728 words
character code128000000
Maximum operating temperature85 °C
Minimum operating temperature
organize128MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA96,9X16,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
power supply1.5 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length8
Maximum standby current0.011 A
Maximum slew rate0.193 mA
Nominal supply voltage (Vsup)1.5 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
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