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K4W2G1646B-HC15

Description
Cache DRAM Module, 128MX16, 0.255ns, CMOS, PBGA96
Categorystorage    storage   
File Size3MB,119 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Environmental Compliance  
Download Datasheet Parametric View All

K4W2G1646B-HC15 Overview

Cache DRAM Module, 128MX16, 0.255ns, CMOS, PBGA96

K4W2G1646B-HC15 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid1126060093
package instructionFBGA, BGA96,9X16,32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time0.255 ns
Maximum clock frequency (fCLK)667 MHz
I/O typeCOMMON
interleaved burst length8
JESD-30 codeR-PBGA-B96
JESD-609 codee3
memory density2147483648 bit
Memory IC TypeCACHE DRAM MODULE
memory width16
Humidity sensitivity level1
Number of terminals96
word count134217728 words
character code128000000
Maximum operating temperature85 °C
Minimum operating temperature
organize128MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA96,9X16,32
Package shapeRECTANGULAR
Package formGRID ARRAY, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.5 V
Certification statusNot Qualified
refresh cycle8192
Continuous burst length8
Maximum standby current0.012 A
Maximum slew rate0.3 mA
Nominal supply voltage (Vsup)1.5 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceMATTE TIN
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM

K4W2G1646B-HC15 Preview

Rev. 1.22, Apr. 2010
K4W2G1646B
2Gb B-die gDDR3 SDRAM
96 FBGA with Lead-Free & Halogen-Free
(RoHS Compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed
herein is provided on an "AS IS" basis, without warranties of any kind.
This document and all information discussed herein remain the sole and exclusive property of Samsung
Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property
right is granted by one party to the other party under this document, by implication, estoppel or other-
wise.
Samsung products are not intended for use in life support, critical care, medical, safety equipment, or
similar applications where product failure could result in loss of life or personal or physical harm, or any
military or defense application, or any governmental procurement to which special terms or provisions
may apply.
For updates or additional information about Samsung products, contact your nearest Samsung office.
All brand names, trademarks and registered trademarks belong to their respective owners.
2010 Samsung Electronics Co., Ltd. All rights reserved.
-1-
K4W2G1646B
datasheet
History
- First release
- Added IDD spec values (speed bin 1333/1600Mbps) on page 34
- Removed IDD6ET/IDD6TC since they have been unified to IDD6 on page 34
- Changed the device name from gDDR3 to SDDR3 in order to avoid the confu-
sion with GDDR3
Draft Date
Nov. 2008
Nov. 2009
Rev. 1.22
gDDR3 SDRAM
Revision History
Revision No.
0.0
1.0
Remark
-
-
Editor
K.A.Kim
K.A.Kim
1.1
1.2
1.21
1.22
- Added thermal characteristics table on page 34
- Changed Layout
- Changed the device name to the original description "gDDR3"
- Attached Device operation & Timing diagram on page 56~121
Nov. 2009
Dec. 2009
Mar. 2010
Apr. 2010
-
-
-
-
S.H.Kim
S.H.Kim
S.H.Kim
S.H.Kim
-2-
K4W2G1646B
datasheet
Rev. 1.22
gDDR3 SDRAM
Table Of Contents
2Gb B-die gDDR3 SDRAM
1. FEATURES................................................................................................................................................................... 6
2. Key Features................................................................................................................................................................. 6
3. Package pinout/Mechanical Dimension & Addressing.................................................................................................. 7
3.1 x16 Package Pinout (Top view) : 96ball FBGA Package ....................................................................................... 7
3.2 FBGA Package Dimension (x16)............................................................................................................................. 8
4. Input/Output Functional Description.............................................................................................................................. 9
5. gDDR3 SDRAM Addressing ......................................................................................................................................... 10
6. Absolute Maximum Ratings .......................................................................................................................................... 11
6.1 Absolute Maximum DC Ratings............................................................................................................................... 11
6.2 DRAM Component Operating Temperature Range ................................................................................................ 11
7. AC & DC Operating Conditions..................................................................................................................................... 11
7.1 Recommended DC operating Conditions (SSTL_1.5)............................................................................................. 11
8. AC & DC Input Measurement Levels ............................................................................................................................ 12
8.1 AC and DC Logic input levels for single-ended signals ........................................................................................... 12
8.2 V
REF
Tolerances...................................................................................................................................................... 13
8.3 AC & DC Logic Input Levels for Differential Signals ................................................................................................ 14
8.3.1. Differential signals definition ............................................................................................................................ 14
8.3.2. Differential swing requirement for clock (CK - CK) and strobe (DQS - DQS) .................................................. 14
8.3.3. Single-ended requirements for differential signals ........................................................................................... 15
8.4 Differential Input Cross Point Voltage...................................................................................................................... 16
8.5 Slew Rate Definition for Single Ended Input Signals............................................................................................... 16
8.6 Slew rate definition for Differential Input Signals ..................................................................................................... 16
9. AC and DC Output Measurement Levels...................................................................................................................... 17
9.1 Single Ended AC and DC Output Levels................................................................................................................. 17
9.2 Differential AC and DC Output Levels ..................................................................................................................... 17
9.3 Single-ended Output Slew Rate .............................................................................................................................. 17
9.4 Differential Output Slew Rate .................................................................................................................................. 18
9.5 Reference Load for AC Timing and Output Slew Rate ............................................................................................ 18
9.6 Overshoot/Undershoot Specification ....................................................................................................................... 19
9.6.1. Address and Control Overshoot and Undershoot specifications...................................................................... 19
9.6.2. Clock, Data, Strobe and Mask Overshoot and Undershoot specifications....................................................... 19
9.7 34 ohm Output Driver DC Electrical Characteristics................................................................................................ 20
9.7.1. Output Drive Temperature and Voltage sensitivity........................................................................................... 21
9.8 On-Die Termination (ODT) Levels and I-V Characteristics ..................................................................................... 21
9.8.1. ODT DC electrical characteristics .................................................................................................................... 22
9.8.2. ODT Temperature and Voltage sensitivity ....................................................................................................... 23
9.9 ODT Timing Definitions ........................................................................................................................................... 24
9.9.1. Test Load for ODT Timings.............................................................................................................................. 24
9.9.2. ODT Timing Definition...................................................................................................................................... 24
10. IDD Specification Parameters and Test Conditions .................................................................................................... 27
10.1 IDD Measurement Conditions ............................................................................................................................... 27
10.2 IDD Specifications definition .................................................................................................................................. 27
11. 2Gb gDDR3 SDRAM B-die IDD Spec Table............................................................................................................... 35
12. Thermal Characteristics Table ( 1.33/1.6Gbps at VDD=1.5V + 0.075V, VDDQ=1.5V + 0.075V) ............................... 35
13. Input/Output Capacitance ........................................................................................................................................... 36
14. Electrical Characteristics and AC timing for gDDR3-1066 to gDDR3-2000 ................................................................ 37
14.1 Clock Specification ................................................................................................................................................ 37
14.1.1. Definition for tCK(avg).................................................................................................................................... 37
14.1.2. Definition for tCK(abs).................................................................................................................................... 37
14.1.3. Definition for tCH(avg) and tCL(avg) .............................................................................................................. 37
14.1.4. Definition for note for tJIT(per), tJIT(per, Ick) ................................................................................................. 37
14.1.5. Definition for tJIT(cc), tJIT(cc, Ick) ................................................................................................................. 37
14.1.6. Definition for tERR(nper)................................................................................................................................ 37
14.2 Refresh Parameters by Device Density................................................................................................................. 38
-3-
K4W2G1646B
datasheet
Rev. 1.22
gDDR3 SDRAM
14.3 Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin ................................................................. 38
14.3.1. Speed Bin Table Notes .................................................................................................................................. 39
15. Speed Bins and CL, tRCD, tRP, tRC and tRAS for corresponding Bin ...................................................................... 40
15.1 Jitter Notes ............................................................................................................................................................ 43
15.2 Timing Parameter Notes........................................................................................................................................ 44
15.3 Address / Command Setup, Hold and Derating: ................................................................................................... 45
15.4 Data Setup, Hold and Slew Rate Derating: ........................................................................................................... 51
16. Functional Description ................................................................................................................................................ 56
16.1 Simplified State Diagram ....................................................................................................................................... 56
16.2 Basic Functionality................................................................................................................................................. 57
16.3 RESET and Initialization Procedure ...................................................................................................................... 57
16.3.1. Power-up Initialization Sequence................................................................................................................... 57
16.3.2. Reset Initialization with Stable Power ............................................................................................................ 58
16.4 Register Definition ................................................................................................................................................. 59
16.4.1. Programming the Mode Registers ................................................................................................................. 59
16.4.2. Mode Register MR0 ....................................................................................................................................... 60
16.4.2.1. Burst Length, Type and Order ................................................................................................................. 60
16.4.2.2. CAS Latency............................................................................................................................................ 61
16.4.2.3. Test Mode................................................................................................................................................ 61
16.4.2.4. DLL Reset................................................................................................................................................ 61
16.4.2.5. Write Recovery ........................................................................................................................................ 61
16.4.2.6. Precharge PD DLL................................................................................................................................... 61
16.4.3. Mode Register MR1 ....................................................................................................................................... 62
16.4.3.1. DLL Enable/Disable ................................................................................................................................. 63
16.4.3.2. Output Driver Impedance Control ............................................................................................................ 63
16.4.3.3. ODT Rtt Values........................................................................................................................................ 63
16.4.3.4. Additive Latency (AL)............................................................................................................................... 63
16.4.3.5. Write leveling ........................................................................................................................................... 63
16.4.3.6. Output Disable ......................................................................................................................................... 63
16.4.4. Mode Register MR2 ....................................................................................................................................... 64
16.4.4.1. Partial Array Self-Refresh (PASR) ........................................................................................................... 65
16.4.4.2. CAS Write Latency (CWL) ....................................................................................................................... 65
16.4.4.3. Auto Self-Refresh (ASR) and Self-Refresh Temperature (SRT) ............................................................. 65
16.4.4.4. Dynamic ODT (Rtt_WR) .......................................................................................................................... 65
16.4.5. Mode Register MR3 ....................................................................................................................................... 65
16.4.5.1. Multi-Purpose Register (MPR) ................................................................................................................. 65
17. gDDR3 SDRAM Command Description and Operation .............................................................................................. 66
17.1 Command Truth Table........................................................................................................................................... 66
17.2 Clock Enable (CKE) Truth Table ........................................................................................................................... 67
17.3 No OPeration (NOP) Command ............................................................................................................................ 67
17.4 Deselect Command ............................................................................................................................................... 67
17.5 DLL-off Mode......................................................................................................................................................... 68
17.6 DLL on/off switching procedure ............................................................................................................................. 69
17.6.1. DLL "on" to DLL "off" Procedure .................................................................................................................... 69
17.6.2. DLL "off" to DLL "on" Procedure .................................................................................................................... 70
17.7 Input clock frequency change................................................................................................................................ 71
17.8 Write Leveling........................................................................................................................................................ 72
17.8.1. DRAM setting for write leveling & DRAM termination function in that mode.................................................. 72
17.8.2. Procedure Description.................................................................................................................................... 73
17.8.3. Write Leveling Mode Exit ............................................................................................................................... 74
17.9 Extended Temperature Usage .............................................................................................................................. 75
17.9.1. Self-Refresh Temperature Range - SRT........................................................................................................ 75
17.10 Multi Purpose Register ........................................................................................................................................ 76
17.10.1. MPR Functional Description......................................................................................................................... 76
17.10.2. MPR Register Address Definition................................................................................................................. 77
17.10.3. Relevant Timing Parameters........................................................................................................................ 77
17.10.4. Protocol Example ......................................................................................................................................... 77
17.11 ACTIVE Command .............................................................................................................................................. 80
17.12 PRECHARGE Command .................................................................................................................................... 80
17.13 READ Operation.................................................................................................................................................. 80
17.13.1. READ Burst Operation ................................................................................................................................. 80
17.13.2. READ Timing Definitions.............................................................................................................................. 81
-4-
K4W2G1646B
datasheet
Rev. 1.22
gDDR3 SDRAM
17.13.2.1. gDDR3 Clock to Data Strobe relationship ............................................................................................. 82
17.13.2.2. gDDR3 Data Strobe to Data relationship............................................................................................... 83
17.13.2.3. tLZ(DQS), tLZ(DQ), tHZ(DQS), tHZ(DQ) Calculation ............................................................................ 83
17.13.2.4. tRPRE Calculation ................................................................................................................................. 84
17.13.2.5. tRPST Calculation ................................................................................................................................. 84
17.13.3. Burst Read Operation followed by a Precharge........................................................................................... 90
17.14 WRITE Operation ................................................................................................................................................ 91
17.14.1. gDDR3 Burst Operation ............................................................................................................................... 91
17.14.2. WRITE Timing Violations ............................................................................................................................. 91
17.14.2.1. Motivation .............................................................................................................................................. 91
17.14.2.2. Data Setup and Hold Violations............................................................................................................. 91
17.14.2.3. Strobe to Strobe and Strobe to Clock Violations ................................................................................... 91
17.14.2.4. Write Timing Parameters ....................................................................................................................... 91
17.14.3. Write Data Mask........................................................................................................................................... 92
17.14.4. tWPRE Calculation....................................................................................................................................... 93
17.14.5. tWPST Calculation ....................................................................................................................................... 93
17.15 Refresh Command .............................................................................................................................................. 99
17.16 Self-Refresh Operation........................................................................................................................................ 100
17.17 Power-Down Modes ............................................................................................................................................ 101
17.17.1. Power-Down Entry and Exit ......................................................................................................................... 101
17.17.2. Power-Down clarifications - Case 1 ............................................................................................................. 105
17.17.3. Power-Down clarifications - Case 2 ............................................................................................................. 105
17.17.4. Power-Down clarifications - Case 3 ............................................................................................................. 106
17.18 ZQ Calibration Commands .................................................................................................................................. 107
17.18.1. Calibration Description ................................................................................................................................. 107
17.18.2. ZQ Calibration Timing .................................................................................................................................. 107
17.18.3. ZQ External Resistor Value and Tolerance and Capacitive loading ............................................................ 107
18. On-Die Termination (ODT).......................................................................................................................................... 108
18.1 ODT Mode Register and ODT Truth Table............................................................................................................ 108
18.2 Synchronous ODT Mode ....................................................................................................................................... 109
18.2.1. ODT Latency and Posted ODT ...................................................................................................................... 109
18.2.2. Timing Parameters......................................................................................................................................... 109
18.2.3. ODT during Reads: ........................................................................................................................................ 111
18.3 Dynamic ODT ........................................................................................................................................................ 112
18.3.1. Functional Description:................................................................................................................................... 112
18.3.2. ODT Timing Diagrams ................................................................................................................................... 113
18.4 Asynchronous ODT mode ..................................................................................................................................... 115
18.4.1. Synchronous to Asynchronous ODT Mode Transition ................................................................................... 115
18.4.2. Synchronous to Asynchronous ODT Mode Transition during Powerdown Entry........................................... 116
18.4.3. Asynchronous to Synchronous ODT Mode Transition during Power-Down Exit ........................................... 118
18.4.4. Asynchronous to Synchronous ODT Mode during short CKE high and short CKE low periods .................... 119
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