Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev No.
Rev. 0.0
Rev. 1.0
History
Initial release with Preliminary.
1.1 Removed Low power Version.
1.2 Removed Data Retention Characteristics.
1.3 Changed I
SB1
to 20mA
Relax D.C parameters.
Item
I
CC
12ns
15ns
20ns
Previous
160mA
155mA
150mA
Current
195mA
190mA
185mA
Final
Draft Data
Feb. 12. 1999
Mar. 29. 1999
Remark
Preliminary
Preliminary
Rev. 2.0
Aug. 19. 1999
Preliminary
Rev. 3.0
3.1 Delete Preliminary
3.2 Update D.C parameters and 10ns part.
I
CC
-
195mA
190mA
185mA
Previous
I
sb
70mA
I
sb1
20mA
I
CC
155mA
145mA
135mA
125mA
Current
I
sb
60mA
I
sb1
10mA
Mar. 27. 2000
10ns
12ns
15ns
20ns
Rev. 4.0
Rev. 5.0
Add Low Power-Ver.
Delete 20ns speed bin
Apr. 24. 2000
Sep. 24. 2001
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 5.0
September 2001
PRELIMINARY
K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
512K x 8 Bit High-Speed CMOS Static RAM
FEATURES
• Fast Access Time 10,12,15ns(Max.)
• Low Power Dissipation
Standby (TTL)
: 60mA(Max.)
(CMOS) : 10mA(Max.)
1.2mA(Max.) L-Ver. only
Operating
K6R4008V1C-10 : 155mA(Max.)
K6R4008V1C-12 : 145mA(Max.)
K6R4008V1C-15 : 135mA(Max.)
• Single 3.3±0.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• 2V Minimum Data Retention : L-Ver. only
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
K6R4008V1C-J : 36-SOJ-400
K6R4008V1C-T : 44-TSOP2-400BF
CMOS SRAM
GENERAL DESCRIPTION
The K6R4008V1C is a 4,194,304-bit high-speed Static Random
Access Memory organized as 524,288 words by 8 bits. The
K6R4008V1C uses 8 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG′s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The K6R4008V1C is packaged
in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II.
FUNCTIONAL BLOCK DIAGRAM
Clk Gen.
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
A
9
I/O
1
~I/O
8
ORDERING INFORMATION
K6R4008V1C-C10/C12/C15
Commercial Temp.
Industrial Temp.
K6R4008V1C-I10/I12/I15
Pre-Charge Circuit
Row Select
Memory Array
1024 Rows
512 x 8 Columns
Data
Cont.
CLK
Gen.
I/O Circuit
Column Select
A
10
A
11
A
12
A
13
A
14
A
15
A
16
A
17
A
18
CS
WE
OE
-2-
Rev 5.0
September 2001
PRELIMINARY
K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
PIN CONFIGURATION
(Top View)
A
0
A
1
A
2
A
3
A
4
CS
I/O
1
I/O
2
Vcc
Vss
1
2
3
4
5
6
7
8
9
10
36 N.C
35 A
18
34 A
17
33 A
16
32 A
15
31
OE
N.C
N.C
A
0
A
1
A
2
A
3
A
4
CS
I/O
1
1
2
3
4
5
6
7
8
9
44 N.C
43 N.C
42 N.C
41
40
39
38
37
A
18
A
17
A
16
A
15
OE
CMOS SRAM
30 I/O
8
29 I/O
7
36 I/O
8
35 I/O
7
36-SOJ
I/O
2
10
Vcc 11
Vss 12
I/O
3
13
I/O
4
14
WE
A
5
A
6
A
7
A
8
A
9
15
16
17
18
19
20
28 Vss
27 Vcc
26 I/O
6
25 I/O
5
24 A
14
23 A
13
22 A
12
21 A
11
20 A
10
19 N.C
44-TSOP2
34 Vss
33 Vcc
32 I/O
6
31 I/O
5
30
29
28
27
26
A
14
A
13
A
12
A
11
A
10
I/O
3
11
I/O
4
12
WE
A
5
A
6
A
7
A
8
A
9
13
14
15
16
17
18
25 N.C
24 N.C
23 N.C
N.C 21
N.C 22
PIN FUNCTION
Pin Name
A
0
- A
18
WE
CS
OE
I/O
1
~ I/O
8
V
CC
V
SS
N.C
Pin Function
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+3.3V)
Ground
No Connection
ABSOLUTE MAXIMUM RATINGS*
Parameter
Voltage on Any Pin Relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
Commercial
Industrial
Symbol
V
IN
, V
OUT
V
CC
P
D
T
STG
T
A
T
A
Rating
-0.5 to 4.6
-0.5 to 4.6
1.0
-65 to 150
0 to 70
-40 to 85
Unit
V
V
W
°C
°C
°C
*
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
-3-
Rev 5.0
September 2001
PRELIMINARY
K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
RECOMMENDED DC OPERATING CONDITIONS*
(T
A
=0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
3.0
0
2.0
-0.3**
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3***
0.8
Unit
V
V
V
V
CMOS SRAM
* The above parameters are also guaranteed at industrial temperature range.
** V
IL
(Min) = -2.0V a.c(Pulse Width
≤
8ns) for I
≤
20mA.
*** V
IH
(Max) = V
CC
+ 2.0V a.c (Pulse Width
≤
8ns) for I
≤
20mA
DC AND OPERATING CHARACTERISTICS*
(T
A
=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)
Parameter
Input Leakage Current
Output Leakage Current
Operating Current
Symbol
I
LI
I
LO
I
CC
V
IN
=V
SS
to V
CC
CS=V
IH
or OE=V
IH
or WE=V
IL
V
OUT
=V
SS
to V
CC
Min. Cycle, 100% Duty
CS=V
IL,
V
IN
=V
IH
or V
IL,
I
OUT
=0mA
Com.
10ns
12ns
15ns
Ind.
10ns
12ns
15ns
Standby Current
I
SB
I
SB1
Min. Cycle, CS=V
IH
f=0MHz, CS≥V
CC
-0.2V,
V
IN
≥V
CC
-0.2V or V
IN
≤0.2V
I
OL
=8mA
I
OH
=-4mA
Norrmal
L-Ver.
Test Conditions
Min
-2
-2
-
-
-
-
-
-
-
-
-
-
2.4
Max
2
2
155
145
135
170
160
150
60
10
1.2
0.4
-
V
V
mA
Unit
µA
µA
mA
Output Low Voltage Level
Output High Voltage Level
V
OL
V
OH
* The above parameters are also guaranteed at industrial temperature range.
CAPACITANCE*
(T
A
=25°C, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
* Capacitance is sampled and not 100% tested.
Symbol
C
I/O
C
IN
Test Conditions
V
I/O
=0V
V
IN
=0V
MIN
-
-
Max
8
7
Unit
pF
pF
-4-
Rev 5.0
September 2001
PRELIMINARY
K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
AC CHARACTERISTICS
(T
A
=0 to 70°C, V
CC
=3.3±0.3V, unless otherwise noted.)
TEST CONDITIONS*
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Reference Levels
Output Loads
*The above test conditions are also applied at industrial temperature range.
CMOS SRAM
Value
0V to 3V
3ns
1.5V
See below
Output Loads(A)
Output Loads(B)
for t
HZ
, t
LZ
, t
WHZ
, t
OW
, t
OLZ
& t
OHZ
R
L
= 50Ω
+3.3V
D
OUT
V
L
= 1.5V
Z
O
= 50Ω
30pF*
D
OUT
353Ω
319Ω
5pF*
* Capacitive Load consists of all components of the
test environment.
* Including Scope and Jig Capacitance
READ CYCLE*
K6R4008V1C-10
K6R4008V1C-12
K6R4008V1C-15
Parameter
Read Cycle Time
Address Access Time
Chip Select to Output
Output Enable to Valid Output
Chip Enable to Low-Z Output
Output Enable to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
Chip Selection to Power Up Time
Chip Selection to Power DownTime
Symbol
t
RC
t
AA
t
CO
t
OE
t
LZ
t
OLZ
t
HZ
t
OHZ
t
OH
t
PU
t
PD
Min
10
-
-
-
3
0
0
0
3
0
-
Max
-
10
10
5
-
-
5
5
-
-
10
Min
12
-
-
-
3
0
0
0
3
0
-
Max
-
12
12
6
-
-
6
6
-
-
12
Min
15
-
-
-
3
0
0
0
3
0
-
Max
-
15
15
7
-
-
7
7
-
-
15
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
* The above parameters are also guaranteed at industrial temperature range.
A person's life is a process of continuous learning and growth. In the blink of an eye, my graduate study career ended and I took a new job. Looking back, I found that I had unknowingly gone through f...
Specifications are very important. Those who have worked in the company must know that the company emphasizes specifications, especially for large designs (whether software or hardware). It is almost ...
[i=s] This post was last edited by paulhyde on 2014-9-15 09:18 [/i] Please, is there any kindhearted person who has a graduation thesis on "Research on Single-Chip Microcomputer Intelligent Temperatur...
Usually when you buy a humidity sensor, you cannot know the performance of the sensor without calibration equipment. Now I will teach you four simple methods to judge and check the performance of the ...
Sailing is gaining more and more attention. How to use modern technology to assist training and improve competition results is particularly important. Considering the real-time data collection in t...[Details]
The Portable Digital Data Acquisition System (PDDAS) uses LabVIEW Real-Time and PXI to control the wind tunnel test and record air pressure data from 128 different channels.
"The LabVIEW Real-...[Details]
As LEDs continue to improve in almost every aspect of performance and cost, LED lighting is being used in an increasingly wide range of applications, among which LED street lights are a focus of in...[Details]
My colleague and I spent the day chatting in the hotel bar. We had met with several customers. We were both wondering how come these engineers we were meeting knew almost nothing about analog techn...[Details]
In the analysis of electronic circuits, static analysis (also known as DC analysis) is the basis of circuit analysis. However, it is well known that electronic components are nonlinear, so the anal...[Details]
RS-422 and RS-485 are both serial data interface standards, which were developed and published by the Electronic Industries Association (EIA). RS-422 defines a balanced communication interface with a ...[Details]
In recent years, with the rapid development of the information industry, dot matrix LED display screens have been widely used in various advertising and information display systems such as the fina...[Details]
Nippon Electric Works and Volvo Technology Japan have developed a wireless power supply system for electric vehicles (EVs). Using this system, the two companies have successfully conducted an exper...[Details]
Today, the value of electronic components in cars accounts for 15-20% of the total vehicle. In the future, this proportion may be as high as 30-40% as more safety electronics, fuel consumption and ...[Details]
Motors are important products that convert electrical energy into mechanical energy to achieve automation, and they are widely used in industrial control, medical electronics, white a...[Details]
Describe how to meet the challenges of complexity with a modern wiring design toolset. Option codes and expressions can simulate the variables of an automotive project. A full-featured tool suite c...[Details]
D5026A is a driver IC designed by Shanghai Debei Electronics for energy-saving LED display screens. Its design concept is energy-saving and compatible with existing solutions, that is, it can be ...[Details]
1 Introduction
Ultrasound refers to elastic vibration with a frequency higher than the audible frequency limit (i.e., in the frequency band above 20 kHz). The propagation process of this vib...[Details]
0 Introduction
Wireless Sensor Network (WSN) monitors the target by deploying a large number of sensor nodes in the target area. WSN realizes the positioning and tracking of the target, determi...[Details]
With the continuous advancement of various technologies in the field of measurement and control, the baseband subsystem of general measurement and control equipment has entered the fourth generation o...[Details]
MCU
京公网安备 11010802033920号
EEWORLD
