Modes of Operation and Pin-outs ................................................................................................................................................ 6
Pin-out Top Views................................................................................................................................................................. 6
Test Circuit Diagrams for LVCMOS and Clipped Sinewave Outputs ........................................................................................... 7
Frequency Stability ............................................................................................................................................................. 11
Output frequency and format .............................................................................................................................................. 11
Output Frequency Tuning ................................................................................................................................................... 11
Pin 1 Configuration (OE, VC, or NC) .................................................................................................................................. 12
Control Voltage Bandwidth ................................................................................................................................................. 15
Pull Range, Absolute Pull Range ............................................................................................................................................... 16
I
2
C Control Registers ................................................................................................................................................................. 21
Register Address: 0x00. Digital Frequency Control Least Significant Word (LSW) ............................................................ 21
Register Address: 0x01. OE Control, Digital Frequency Control Most Significant Word (MSW) ......................................... 22
Register Address: 0x02. DIGITAL PULL RANGE CONTROL ............................................................................................ 23
Register Address: 0x05. PULL-UP DRIVE STRENGTH CONTROL .................................................................................. 24
Register Address: 0x06. PULL-DOWN DRIVE STRENGTH CONTROL ............................................................................ 25
Serial Interface Configuration Description.................................................................................................................................. 26
Serial Signal Format .................................................................................................................................................................. 26
Parallel Signal Format................................................................................................................................................................ 27
Parallel Data Format .................................................................................................................................................................. 27
I
2
C Timing Specification ............................................................................................................................................................. 29
I
2
C Device Address Modes ........................................................................................................................................................ 30
Schematic Example ................................................................................................................................................................... 31
Dimensions and Patterns ........................................................................................................................................................... 32
Ordering Information .................................................................................................................................................................. 34
Rev 0.60
Page 2 of 36
www.sitime.com
SiT5357
60 to 220 MHz,
±0.1
to
±0.25
ppm
Elite Platform™ Precision Super-TCXO
Electrical Characteristics
PRELIMINARY
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and 3.3V Vdd
Table 1. Output Characteristics
Parameters
Output Frequency Range
Duty Cycle
Rise/Fall Time
Output Voltage High
Output Voltage Low
Output Voltage Level
Frequency Stability over Temperature
Frequency vs. Temperature Slope
Dynamic Frequency Change to
Temperature Ramp
Initial Tolerance
24-hour holdover stability
Hysteresis Over Temperature
Symbol
F
DC
Tr, Tf
VOH
VOL
V_out
F_stab
ΔF/ΔT
F_dynamic
F_init
F_24_Hold
F_hys
Min.
60.000001
45
–
90%
–
0.8
-0.1
–
–
-1
-0.28
–
–
–
Supply Voltage Sensitivity
Output Load Sensitivity
One-Day Aging
One-Year Aging
20-Year Aging
Frequency Stability over Temperature
Frequency vs. Temperature Slope
Dynamic Frequency Change during
Temperature Ramp
Initial Tolerance
24-hour holdover
Supply Voltage Sensitivity
Output Load Sensitivity
One-Day Aging
One-Year Aging
20-Year Total Stability
Start-up Time
First Pulse Accuracy
F_Vdd
F_load
F_1d
F_1y
F_20y
F_stab
ΔF/ΔT
F_dynamic
F_init
F_24_Hold
F_Vdd
F_load
F_1d
F_1y
F_20y
T
T_start
T_stability
–
–
–
–
–
–
-0.2
0.25
–
–
-1
-0.32
–
–
–
–
–
-4.6
–
–
±2.5
±2
±1
±3
±1
–
5
10
Typ.
–
–
1
–
–
–
–
±2.5
±0.021
–
–
±15
±15
±10
±2.5
±1
±1
±3
±0.5
±1
–
–
±8
±0.07
–
Max.
220
55
–
–
10%
1.2
+0.1
–
–
+1
+0.28
–
–
–
–
–
–
–
–
–
+0.2
+0.25
–
–
+1
+0.32
–
–
–
–
–
+4.6
–
–
Unit
MHz
%
ns
Vdd
Vdd
V
ppm
ppb/°C
ppb/s
ppm
ppm
ppb
ppb
ppb
ppb
ppb
ppb
ppb
ppm
ppm
ppm
ppm
ppb/°C
ppb/s
ppm
ppm
ppb
ppb
ppb
ppb
ppm
ppm
ms
ms
0.5C/min temperature ramp rate
Initial frequency at 25°C inclusive of solder-down
shift at 48 hours after 2 reflows
Per Stratum 3 definition
Vdd ±5%
LVCMOS output, 15 pF ±10%
Clipped sinewave output, 10kΩ, 10 pF ±10%
After 30-days of continued operation
At 25°C
Stratum 3 per GR-1244
Time to first pulse, measured from the time Vdd
reaches 90% of its final value
Time to first accurate pulse within rated stability,
measured from the time Vdd reaches 90% of its final
value
0.5C/min temperature ramp rate
Initial frequency at 25°C inclusive of solder-down shift
at 48 hours after 2 reflows
Per Stratum 3 definition
-40 to 105C
-40 to 85C
-20 to 70C
Vdd ±5%
LVCMOS output, 15 pF ±10%
Clipped sinewave output, 10kΩ, 10 pF ±10%
After 30-days of continued operation
At 25°C
At 25°C
Referenced to (fmax + fmin)/2 over the specified
temperature range
10% - 90% Vdd
I
OH
= -6 mA, (Vdd = 3.3 V, 3.0 V, 2.8 V, 2.5 V)
I
OL
= 6 mA, (Vdd = 3.3 V, 3.0 V, 2.8 V, 2.5 V)
Measured peak-to-peak swing at any Vdd
Referenced to (max frequency + minimum
frequency)/2 over the specified temperature range
Condition
Frequency Coverage
LVCMOS Output Characteristics
Clipped Sinewave Output Characteristics
Frequency Stability - Stratum 3+ Grade
Frequency Stability - Stratum 3 Grade
Start-up Characteristics
Rev 0.60
Page 3 of 36
www.sitime.com
SiT5357
60 to 220 MHz,
±0.1
to
±0.25
ppm
Elite Platform™ Precision Super-TCXO
Table 2. DC Characteristics
Parameters
Supply Voltage
Symbol
Vdd
Min.
2.25
2.52
2.7
2.97
Current Consumption
OE Disable Current
Operating Temperature Range
IDD
I_od
T_use
–
–
-20
-40
-40
Typ.
2.5
2.8
3.0
3.3
Max.
2.75
3.08
3.3
3.63
Unit
V
V
V
V
mA
mA
°C
°C
°C
PRELIMINARY
Condition
Contact
SiTime
for 2.25V to 3.63V continuous supply
voltage support
Supply Voltage
Current Consumption
–
45
44.5
–
–
–
–
Temperature Range
+70
+85
+105
F = 98.304 MHz, No Load
OE = GND, output is weakly pulled down
Extended Commercial
Industrial. Contact
SiTime
for 105
°C
support
Extended Industrial
Table 3. Input Characteristics
Parameters
Input Impedance
Input High Voltage
Input Low Voltage
Pull Range
PR
Symbol
Z_in
VIH
VIL
Min.
–
70
–
Typ.
100
–
–
Max.
–
–
30
Unit
kΩ
%
%
Internal pull up to Vdd
Condition
Input Characteristics
–
OE Pin
Frequency Tuning Range – Voltage Control or I
2
C mode
±6.25, ±10, ±12.5, ±25, ±50, ±80,
±100, ±125, ±150, ±200, ±400,
±600, ±800, ±1200, ±1600,
±3200
90%
–
10
–
Positive
–
2
ppm
Voltage Control Characteristics
Upper Control Voltage
Lower Control Voltage
Control Voltage Input Impedance
Control Voltage Input Bandwidth
Frequency Change Polarity
Pull Range Linearity
Input Voltage Low
Input Voltage High
Output Voltage Low
Output Current High
Leakage in high impedance mode
Input Hysteresis
Input Capacitance
Rise Time
Fall Time
VIL
VIH
VOL
IOL
I_leak
V_hys
C_in
Tr
Tf
VC_U
VC_L
VC_z
VC_c
–
–
–
10
0.5
–
–
–
–
–
–
–
–
–
–
–
–
10%
–
–
–
0.3
–
0.4
–
24
0.4
0.3
3
120
60
75
Vdd
Vdd
MΩ
kHz
%
V
V
V
mA
µA
V
V
pF
ns
ns
ns
Vdd = 3.3V, 30% to 70%
Vdd = 2.5V, 30% to 70%
0.1 Vdd< VOUT < 0.9 Vdd
Vdd = 3.3V
Vdd = 2.5V
Contact
SiTime
for other input bandwidth options
I C Interface Characteristics, 1 MHz, 200 Ohm, 550 pF (Max I
2
C Bus Load)
–
0.7
–
21
5.5
0.2
0.2
–
–
30
40
Rev 0.60
Page 4 of 36
www.sitime.com
SiT5357
60 to 220 MHz,
±0.1
to
±0.25
ppm
Elite Platform™ Precision Super-TCXO
Table 4. Jitter & Phase Noise
Parameters
RMS Phase Jitter (random)
T_phj
–
Spurs
RMS Period Jitter
Peak Cycle-to-Cycle Jitter
1 Hz offset
10 Hz offset
100 Hz offset
1 kHz offset
10 kHz offset
100 kHz offset
1 MHz offset
5 MHz offset
T_jitt
T_jitt_cc
–
–
–
–
–
–
–
–
–
–
–
0.30
-94
2
10
-54
-82
-104
-126
-132
-135
-149
-155
–
–
–
–
Phase Noise
–
–
–
–
–
–
–
–
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
ps
dBc
ps
ps
Symbol
Min.
Typ.
Max.
Jitter
–
0.30
–
ps
Unit
PRELIMINARY
Condition
f = 98.304 MHz, Integration bandwidth = 12 kHz to 20
MHz
f = 156.25 MHz, Integration bandwidth = 12 kHz to 20
MHz
f = 98.304 MHz, 12 kHz to 5 MHz offsets
f = 98.304 MHz per JESD65 standard
f = 98.304 MHz per JESD65 standard
f = 98.304 MHz, TCXO and DCTCXO modes, and
VCTCXO mode with ±6.25 ppm pull range
Table 5. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part.
Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
Continuous Power Supply Voltage Range (Vdd)
Human Body Model (HBM) ESD Protection
Soldering Temperature (follow standard Pb-free
soldering guidelines)
Junction Temperature
[1]
Note:
1. Exceeding this temperature for an extended period of time may damage the device.
To thank the forum, we will give you 3 MSP430 USB emulator PCB blank boards. We will use the official BOM and pay for the shipping fee. The boards will be shipped on Saturday....
Analog dimming of high-brightness white LEDs can produce color shifts. PWM digital dimming control is the preferred dimming method to prevent color shifts because the luminous intensity will be the av...
It is impossible to hire a nanny in the dormitory, but we can design an electronic dormitory nanny by combining Bluetooth and single-chip microcomputer. In the morning, the system alarm will remind us...
How to become a learner from a crazy downloader (transferred) [table][tr][td] In order to facilitate the majority of netizens, various websites have emerged. When the construction and development of t...
For related information about Uncle Mario, please move to the following text to learn more... [/size][/font][font=Microsoft Yahei, Hei, Tahoma, SimHei, sans-serif][size=3][url=https://bbs.eeworld.com....
Calibrators are widely used in university experiments. Among them, there are two experiments in nuclear physics experiments in modern physics experiments (GM counter and β absorption) that require ...[Details]
Although improper medical device product design is not always associated with medical device-related errors. Studies of users have shown that lack of adequate training accounts for 70% to 90% of suc...[Details]
For more than 10 years, analog-to-digital converters (ADCs) have been widely used in industrial process control, medical instruments, communication systems, radar and other products as a booster of in...[Details]
As the whole equipment is constantly miniaturized and power-saving, low-power-consumption low-dropout linear regulators (LDO) are becoming the mainstream of the linear regulator market for switching p...[Details]
Preface
Sleep apnea is a very common sleep breathing disease. According to research, about 24% of adult men and 9% of adult women, or more than 2 million people, suffer from this disease ...[Details]
Abstract: Based on the research of the communication process between the reader and the RFID tag, combined with the EPC C1G2 protocol and ISO/IEC18000.6 protocol, a digital circuit of RFID tag appl...[Details]
Today, various applications such as consumption, computers, industry and instruments urgently need compact and effective power solutions, while also meeting the requirements of efficiency, fast tra...[Details]
In order to ensure the reliability of the driving assistance system and the basic functions of the car, and also to leave suitable connection interfaces for the car's future new entertainment and ...[Details]
introduction
In engineering practice, ultrasonic waves are often used to measure distances because of their strong directivity, slow energy consumption, and long propagation distance in th...[Details]
0Introduction
As a service robot in the field of medical care, the application of smart wheelchairs makes extensive use of mobile robot technology. The key technologies involved in the researc...[Details]
A correct circuit design cannot be manufactured 100% correctly when it is taken to the factory for manufacturing. It will always be affected by various uncertainties, such as deviations in manufact...[Details]
Abstract:
QT1101 is a QTouch charge transfer (QT) device, a complete digital controller that can detect signals when approaching or touching up to 10 independent keys. It can be widely used i...[Details]
Test equipment manufacturers are constantly challenged to develop new test solutions that meet the latest product testing needs of their customers, and they often design specialized hardware t...[Details]
0 Introduction
GaAs photocathode is a negative electron affinity photocathode with the advantages of high quantum efficiency, concentrated energy and angle distribution of emitted electrons. T...[Details]
1 TM Card Introduction
TM (Touch Memory) card is a patented product of Dallas Company in the United States. It uses single-line protocol communication and completes data reading and writin...[Details]
PCB Design
京公网安备 11010802033920号
EEWORLD
