PD- 94095A
HEXFET
®
Power MOSFET
l
l
l
l
l
IRF7329
I
D
±
9.2A
±
7.4A
±
4.6A
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
V
DSS
-12V
R
DS(on)
max (mW)
17@V
GS
= -4.5V
21@V
GS
= -2.5V
30@V
GS
= -1.8V
New P-Channel HEXFET
Ò
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Description
S1
G1
S2
G2
1
2
3
4
8
7
D1
D1
D2
D2
6
5
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-9.2
-7.4
-37
2.0
1.3
16
± 8.0
-55 to + 150
Units
V
A
W
mW/°C
V
°C
Thermal Resistance
Symbol
R
qJL
R
qJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
20
62.5
Units
°C/W
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1
01/29/04
IRF7329
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
DV
(BR)DSS
/DT
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-12
-0.40
25
Typ.
0.007
38
6.8
8.1
10
8.6
340
260
3450
1000
640
Max. Units
Conditions
V
V
GS
= 0V, I
D
= -250µA
V/°C Reference to 25°C, I
D
= -1mA
17
V
GS
= -4.5V, I
D
= -9.2A
mW V
GS
= -2.5V, I
D
= -7.4A
21
30
V
GS
= -1.8V, I
D
= -4.6A
-0.90
V
V
DS
= V
GS
, I
D
= -250µA
S
V
DS
= -10V, I
D
= -9.2A
-1.0
V
DS
= -9.6V, V
GS
= 0V
µA
-25
V
DS
= -9.6V, V
GS
= 0V, T
J
= 70°C
-100
nA V
GS
= -8.0V
100
V
GS
= 8.0V
57
I
D
= -9.2A
10
nC V
DS
= -6.0V
12
V
GS
= -4.5V
V
DD
= -6.0V
ns
I
D
= -1.0A
R
D
= 6.0W
V
GS
= -4.5V
V
GS
= 0V
pF
V
DS
= -10V
= 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
50
48
-2.0
A
-37
-1.2
75
72
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -2.0A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board.
Pulse width
£
400µs; duty cycle
£
2%.
2
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IRF7329
100
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
TOP
100
-I
D
, Drain-to-Source Current (A)
10
-I
D
, Drain-to-Source Current (A)
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
TOP
10
1
-1.2V
-1.2V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
0.1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
1
0.1
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
$
Â
q
7
Â
q
i
S
u
g
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
2.0
I
D
= -9.2A
1.5
T
1Â#u7
DÂ
1.0
8
Â
C8
T
1Â #u7
DÂ
V
1ÂV
8SÂ
0.5
V
z
ÂPUFS9ÂWC8TB
0.0
-60 -40 -20
V
GS
= -4.5V
0
20
40
60
80 100 120 140 160
ÂAgqSiqÂVxgsqÂV
AS
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7329
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7
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ÂÂ7sp
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10
I
D
=
-9.2A
V
DS
=-9.6V
V
DS
=-6V
-V
GS
, Gate-to-Source Voltage (V)
"
8
@
!
q
i
g
ui
g
g
7
Â
7
7u
6
4
7
7
2
V
Â8guSiqÂVxgsqÂV
8S
0
0
10
20
30
40
50
60
70
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150
°
C
-I
D
, Drain Current (A)
I
100us
10
1ms
1
T
J
= 25
°
C
10ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
1
0.1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7329
10.0
V
DS
8.0
R
D
V
GS
R
G
D.U.T.
+
-I
D
, Drain Current (A)
6.0
V
GS
Pulse Width
£ 1
µs
Duty Factor
£ 0.1 %
4.0
Fig 10a.
Switching Time Test Circuit
2.0
t
d(on)
t
r
t
d(off)
t
f
V
GS
0.0
25
50
75
100
125
150
10%
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
1
10
100
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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V
DD
5
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