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BUK7E2R6-60E,127

Description
mosfet N-CH 60v 120a i2pak
Categorysemiconductor    Discrete semiconductor   
File Size207KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
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BUK7E2R6-60E,127 Overview

mosfet N-CH 60v 120a i2pak

BUK7E2R6-60E,127 Parametric

Parameter NameAttribute value
Datasheets
BUK7E2R6-60E
Product Photos
I2PAK SOT226
Standard Package50
CategoryDiscrete Semiconductor Products
FamilyFETs - Single
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs2.6 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) @ Vgs158nC @ 10V
Input Capacitance (Ciss) @ Vds11180pF @ 25V
Power - Max349W
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageI2PAK
Dynamic CatalogN-Channel Logic Level Gate FETs
Other Names568-9851-5934066514127BUK7E2R660E127
BUK7E2R6-60E
11 September 2012
N-channel TrenchMOS standard level FET
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1V at 175 °C
1.3 Applications
12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 10 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
I
D
= 25 A; V
DS
= 48 V; V
GS
= 10 V;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
[1]
Min
-
-
-
Typ
-
-
-
Max
60
120
349
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
-
2.1
2.6
Dynamic characteristics
Q
GD
gate-drain charge
-
45.5
-
nC
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