6 Eon includes diode reverse recovery. See figures 18, 20.
7 We do not recommend using this CoolMOS™ product in topologies
that have fee wheeling load current conducted in the body diode that is
hard commutated. The current commutation is very "snappy", resulting in
high di/dt at the completion of commutation, and the likelihood of severe
over-voltage transients due to the resulting high dv/dt.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.60
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.50
D = 0.9
0.40
0.7
0.30
0.5
0.20
0.10
0
0.3
0.1
0.05
10
-5
1-2007
Note:
PDM
050-7238 Rev A
t1
t2
SINGLE PULSE
10
-4
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
I
D
, DRAIN CURRENT (AMPERES)
100
90
80
70
60
50
40
30
20
10
0
APT31N60B_SCS(G)
15 & 10V
6.5V
RC MODEL
Junction
temp. (°C)
0.283
Power
(watts)
0.216
Case temperature. (°C)
0.727
0.00355
6V
5.5V
5V
4.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
90
0
5
10
15
20
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
R
DS
(ON), DRAIN-TO-SOURCE ON RESISTANCE
1.40
1.30
1.20
1.10
1.00
V
GS
=20V
NORMALIZED TO
V
GS
= 10V @ 18A
V
DS
> I
D(ON)
x R
DS(ON)
MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
I
D
, DRAIN CURRENT (AMPERES)
80
70
60
50
40
30
20
10
0
V
GS
=10V
T
J
= -55°C
T
J
= +25°C
T
J
= +125°C
0.90
0.80
0
1
2
3
4
5
6
7
8
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
0
I
D
, DRAIN CURRENT (AMPERES)
30
25
20
15
10
5
0
25
BV
DSS
, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
35
1.15
10
20
30
40
50
I
D
, DRAIN CURRENT (AMPERES)
FIGURE 5, R
DS
(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
R
DS(ON)
, DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
2.5
I = 18A
D
-25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
0.90
-50
V
2.0
V
GS
(TH), THRESHOLD VOLTAGE
(NORMALIZED)
GS
= 10V
1.10
1.05
1.00
0.95
0.90
1-2007
050-7238 Rev A
0.85
0.80
0.75
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.70
-50
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
-50
93
50
I
D
, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY R
(ON)
DS
20
4
10
4
APT31N60B_SCS(G)
C
iss
C, CAPACITANCE (pF)
10
5
10
3
100µS
10
2
C
oss
1
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
1mS
10mS
10
1
C
rss
.1
1
10
100
600
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = 18A
D
0
50
100
150
200
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
10
0
14
12
10
8
6
4
2
0
0
10
I
DR
, REVERSE DRAIN CURRENT (AMPERES)
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
200
100
T
J
=+150°C
T
J
=+25°C
V
DS
=120V
V
DS
=300V
10
V
DS
=480V
20 30 40 50 60 70 80 90 100
Q
g
, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
180
160
140
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
45
40
t
d(off)
V
DD
G
35
30
t
d(on)
and t
d(off)
(ns)
120
100
80
60
40
20
0
= 400V
R
= 4.3Ω
t
r
and t
f
(ns)
t
f
V
DD
G
T = 125°C
J
L = 100µH
25
= 400V
20
15
10
R
= 4.3Ω
T = 125°C
J
L = 100µH
t
r
t
d(on)
0
5
10
15
I
D
(A)
20
25
30
5
0
0
5
10
FIGURE 14, DELAY TIMES vs CURRENT
500
V
DD
G
FIGURE 15, RISE AND FALL TIMES vs CURRENT
400
350
E
off
15
I
D
(A)
20
25
30
= 400V
R
= 4.3Ω
SWITCHING ENERGY (µJ)
L = 100µH
E
diode reverse recovery.
on
SWITCHING ENERGY (µJ)
400
T = 125°C
J
includes
300
250
200
150
100
50
E
on
V
DD
300
E
on
200
E
off
1-2007
= 400V
I = 18A
D
100
T = 125°C
L = 100µH
E
diode reverse recovery.
on
J
050-7238 Rev A
includes
15
20
25
30
I
D
(A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10
10 15 20 25 30 35 40 45 50
R
G
, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
0
5
Typical Performance Curves
90%
APT31N60B_SCS(G)
10%
Gate Voltage
T
J
125°C
Gate Voltage
T
J
125°C
t
d(on)
t
r
90%
5%
10%
Switching Energy
t
d(off)
Drain Current
90%
t
f
Drain Voltage
5%
Drain Voltage
10%
0
Switching Energy
Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DQ60
V
DD
ID
VDS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
D PAK Package Outline
e3 100% Sn
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
3
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
1.04 (.041)
1.15(.045)
Drain
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Revised
4/18/95
13.79 (.543)
13.99(.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
0.46 (.018)
0.56 (.022) {3 Plcs}
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
20.32 (.800)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
[size=3][color=#000][font=Simsun] Linear Technology has always been a leading supplier of high-performance analog ICs in the industrial market. No matter what kind of high-performance design you are e...
In the field of communication, the concept of "synchronization" refers to frequency synchronization, that is, the clock frequency and phase synchronization of each node in the network, and the error s...
TI will create a new driving experience for the future with you - experience it yourself: The limited-time purchase of star products has begun~~Click here to enter the eventEvent time:From now until D...
The college entrance examination is an important answer sheet for everyone’s youth, a farewell, and a beginning.
I believe that after noon, the college entrance examination essay topics of various pro...
[i=s]This post was last edited by hehung on 2019-8-10 13:05[/i]I also have a GigaDevice board GD32F350. This time I tried to collect sensor data on this board. In fact, it is strictly the same as the ...
This program is written to simulate the serial port hardware mechanism. When used, a timed interrupt can be set with a time interval of 1/4 baud rate. The receiving function is called once for ea...[Details]
1 Introduction
The high temperature tester is mainly used for temperature tracking measurement and data acquisition during the heating process. By systematically analyzing the test data, the...[Details]
This paper designs a dot matrix LED text display screen that is easy to update, expandable, and low-cost. The way to reduce costs is
① Use the Bluetooth data transmission function of mobile ph...[Details]
DSP (digital signal processor) is used more and more frequently in today's engineering applications. There are three main reasons for this: first, it has powerful computing power and is capable of ...[Details]
PV inverter manufacturer SMA has launched its first DC arc fault circuit interrupter (AFCI) PV inverter and has received UL certification.
The new SunnyBoy AFCI inverter models include 3000-US...[Details]
General LED lighting has a current limiting resistor in the driving circuit, and the power consumed by the resistor has nothing to do with the LED light emission. In order to improve efficiency, a...[Details]
As a simple and practical input device, buttons have been used in various microcontroller application systems and are ubiquitous. However, the buttons used in different practical occasions are also...[Details]
The concept of state machine
State machine is an important concept in software programming. More important than this concept is its flexible application. In a clear and efficient program, ther...[Details]
Spatial Division Multiplexing (SDM) MIMO processing can significantly improve spectrum efficiency and thus greatly increase the capacity of wireless communication systems. Spatial Division Multip...[Details]
Today, with energy becoming increasingly scarce, the utilization of natural energy has become the focus of people's attention. Among various natural energies, the endless solar energy is highly fav...[Details]
LED light sources have many environmental advantages, but early products still have certain technical bottlenecks in heat dissipation and high brightness design that cannot be broken through....[Details]
The rectified DC voltage is then converted back to AC using power electronics such as insulated gate bipolar transistors.
The output voltage is switched on and off at a high frequency, control...[Details]
Introduction
As the country increases its efforts to control the atmospheric environment, motorcycle emission regulations will become stricter year by year, and motorcycles that do not meet the...[Details]
The production process of lithium batteries does not mention the previous processes such as material preparation, winding, liquid injection, and packaging, but only talks about the final formation ...[Details]
1 Introduction
At present, people have higher and higher requirements for the quality of life. When people are busy with work, soymilk machine is a new type of household beverage machine. It uses so...[Details]
Integrated technical exchanges
京公网安备 11010802033920号
EEWORLD
