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P4KE160AHE3/54

Description
tvs diode 136vwm 219vc axial
CategoryDiscrete semiconductor    diode   
File Size83KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

P4KE160AHE3/54 Overview

tvs diode 136vwm 219vc axial

P4KE160AHE3/54 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeDO-41
package instructionO-PALF-W2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY
Maximum breakdown voltage168 V
Minimum breakdown voltage152 V
Breakdown voltage nominal value160 V
Shell connectionISOLATED
Maximum clamping voltage219 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT APPLICABLE
polarityUNIDIRECTIONAL
Maximum power dissipation1.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage136 V
surface mountNO
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT APPLICABLE
P4KE6.8A thru P4KE540A
www.vishay.com
Vishay General Semiconductor
T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 400 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-41 (DO-204AL)
PRIMARY CHARACTERISTICS
V
WM
V
BR
uni-directional
V
BR
bi-directional
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
5.8 V to 459 V
6.8 V to 540 V
6.8 V to 440 V
400 W
1.5 W
40 A
175 °C
Uni-directional, bi-directional
DO-41 (DO-204AL)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
MECHANICAL DATA
Case:
DO-41 (DO-204AL), molded epoxy body over
passivated chip
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Note
• P4KE250CA to P4KE540A and P4KE250A to P4KE440CA for
commercial grade only
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types, use CA suffix (e.g. P4KE440CA).
Electrical characteristics apply in both directions.
Polarity:
for uni-directional types the color band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform
Peak pulse current with a 10/1000 μs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (fig. 5)
Peak forward surge current
8.3 ms single half-sine wave uni-directional only
(2)
Maximum instantaneous forward voltage at 25 A for uni-directional only
(3)
Operating junction and storage temperature range
(1)
SYMBOL
(fig.1)
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
400
See next table
1.5
40
3.5/5.0
- 55 to + 175
UNIT
W
A
W
A
V
°C
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
8.3 ms single half-sine wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)
V = 3.5 V for P4KE220A and below; V = 5.0 V for P4KE250A and above
F
F
Revision: 16-Jan-18
Document Number: 88365
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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