APT60GF60JU2
ISOTOP
®
Boost chopper
NPT IGBT
K
V
CES
= 600V
I
C
= 60A @ Tc = 95°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Non Punch Through (NPT) THUNDERBOLT IGBT
C
G
E
E
G
C
K
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
ISOTOP
®
Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
C
of V
CEsat
RoHS Compliant
ISOTOP
Absolute maximum ratings
Symbol
V
CES
I
C1
I
C2
I
CM
V
GE
P
D
I
LM
IF
AV
IF
RMS
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
RBSOA clamped Inductive load Current R
G
=11Ω
Maximum Average Forward Current
Duty cycle=0.5
RMS Forward Current (Square wave, 50% duty)
T
C
= 25°C
T
C
= 95°C
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
T
C
= 80°C
Max ratings
600
93
60
360
±20
378
360
30
39
Unit
V
A
October, 2012
1-9
APT60GF60JU2 – Rev 2
V
W
A
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
www.microsemi.com
APT60GF60JU2
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
V
GE(th)
I
GES
Zero Gate Voltage Collector Current
Collector Emitter saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
T
j
= 25°C
V
GE
= 0V
V
CE
= 600V
T
j
= 125°C
T
j
= 25°C
V
GE
=15V
I
C
= 60A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 500µA
V
GE
= ±20V, V
CE
= 0V
Min
Typ
Max
80
2000
2.5
2.8
5
±100
Unit
µA
V
V
nA
2.0
3
4
Dynamic Characteristics
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
ts
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
ts
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Emitter Charge
Gate – Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total switching Losses
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
V
GS
= 15V
V
Bus
= 300V
I
C
= 60A
Resistive Switching (25°C)
V
GE
= 15V
V
Bus
= 300V
I
C
= 60A
R
G
= 5
Inductive Switching (25°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 60A
R
G
= 5
Inductive Switching (150°C)
V
GE
= 15V
V
Bus
= 400V
I
C
= 60A
R
G
= 5
Min
Typ
3125
310
180
257
19
120
20
95
315
245
26
63
395
68
3.4
25
59
430
65
1.6
2.4
4.0
Max
3590
450
310
410
30
180
40
190
470
490
50
125
590
140
7
50
120
650
130
3.2
4.8
8.0
Unit
pF
nC
ns
ns
mJ
ns
mJ
www.microsemi.com
2-9
APT60GF60JU2 – Rev 2
October, 2012
APT60GF60JU2
Chopper diode ratings and characteristics
Symbol
V
F
I
RM
C
T
t
rr
Reverse Recovery Time
I
RRM
Q
rr
t
rr
Q
rr
I
RRM
Maximum Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
I
F
= 30A
V
R
= 400V
di/dt =1000A/µs
I
F
= 30A
V
R
= 400V
di/dt =200A/µs
Characteristic
Diode Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
Test Conditions
I
F
= 30A
I
F
= 60A
I
F
= 30A
V
R
= 600V
V
R
= 600V
V
R
= 200V
I
F
=1A,V
R
=30V
di/dt =100A/µs
Min
Typ
1.6
1.9
1.4
44
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
23
85
160
4
8
130
700
70
1300
30
ns
Max
1.8
250
500
Unit
V
µA
pF
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
A
nC
ns
nC
A
Thermal and package characteristics
Symbol Characteristic
R
thJC
R
thJA
V
ISOL
T
J
,T
STG
T
L
Torque
Wt
Junction to Case Thermal Resistance
Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
IGBT
Diode
2500
-55
Typ
Max
0.33
1.21
20
150
300
1.5
Unit
°C/W
V
°C
N.m
g
Storage Temperature Range
Max Lead Temp for Soldering:0.063” from case for 10 sec
Mounting torque
(Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine)
Package Weight
29.2
www.microsemi.com
3-9
APT60GF60JU2 – Rev 2
October, 2012
APT60GF60JU2
Typical IGBT Performance Curve
www.microsemi.com
4-9
APT60GF60JU2 – Rev 2
October, 2012
www.microsemi.com
APT60GF60JU2
5-9
APT60GF60JU2 – Rev 2
October, 2012
京公网安备 11010802033920号
EEWORLD
