PD - 95862
SMPS MOSFET
Applications
l
Reset Switch for Active Clamp
Reset DC-DC converters
IRF6218
HEXFET
®
Power MOSFET
-150V 150m
:
@V
GS
= -10V
V
DSS
R
DS(on)
max
I
D
-27A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
D
G
S
TO-220AB
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
-150
± 20
-27
-19
-110
250
1.6
8.2
-55 to + 175
Units
V
A
c
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
W
W/°C
V/ns
°C
h
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
g
Typ.
Max.
0.61
–––
62
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
g
g
–––
0.50
–––
Notes
through
are on page 7
www.irf.com
1
04/22/04
IRF6218
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
-150
–––
–––
-3.0
–––
–––
–––
–––
–––
-0.17
120
–––
–––
–––
–––
–––
–––
–––
150
-5.0
-25
-250
-100
100
nA
V
Conditions
V
GS
= 0V, I
D
= -250µA
V/°C Reference to 25°C, I
D
= -1mA
mΩ V
GS
= -10V, I
D
= -16A
V
µA
f
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -120V, V
GS
= 0V
V
DS
= -120V, V
GS
= 0V, T
J
= 150°C
V
GS
= -20V
V
GS
= 20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
71
21
32
21
70
35
30
2210
370
89
2220
170
340
–––
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
S
I
D
= -16A
Conditions
V
DS
= -50V, I
D
= -16A
V
DS
= -120V
V
GS
= -10V
V
DD
= -75V
I
D
= -16A
R
G
= 3.9Ω
V
GS
= -10V
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= -1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= -120V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to -120V
f
f
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Typ.
–––
–––
Max.
210
-16
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
150
860
-27
A
-110
-1.6
–––
–––
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= -16A, V
GS
= 0V
f
T
J
= 25°C, I
F
= -16A, V
DD
= -25V
di/dt = -100A/µs
f
2
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IRF6218
1000
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
1000
TOP
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
-ID, Drain-to-Source Current (A)
100
10
BOTTOM
-ID, Drain-to-Source Current (A)
100
BOTTOM
10
1
-4.5V
0.1
1
-4.5V
≤
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
-V DS, Drain-to-Source Voltage (V)
0.1
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
-V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current
(Α)
ID = -27A
VGS = -10V
2.0
T J = 25°C
T J = 175°C
10
1.5
1.0
1.0
2
4
6
VDS = 50V
≤60µs
PULSE WIDTH
8
10
12
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
-V GS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF6218
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12.0
ID= -16A
-V GS, Gate-to-Source Voltage (V)
10.0
VDS= 120V
VDS= 75V
VDS= 30V
10000
C, Capacitance(pF)
8.0
6.0
Ciss
1000
Coss
100
4.0
Crss
2.0
10
1
10
100
0.0
0
10
20
30
40
50
60
70
80
-V DS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100.00
T J = 175°C
10.00
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
100
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
100µsec
1.00
T J = 25°C
1msec
10msec
1000
VGS = 0V
0.10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-V SD, Source-to-Drain Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF6218
30
V
DS
25
-I D, Drain Current (A)
R
D
V
GS
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
15
10
Fig 10a.
Switching Time Test Circuit
5
V
DS
90%
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
Ri (°C/W)
τi
(sec)
0.264
0.000285
0.206
0.140
0.001867
0.013518
τ
1
0.01
τ
2
Ci=
τi/Ri
Ci= i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
20
V
DD
5
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