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IRG4BC20UD-STRL

Description
igbt 600v 13a 60w d2pak
CategoryDiscrete semiconductor    The transistor   
File Size247KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRG4BC20UD-STRL Overview

igbt 600v 13a 60w d2pak

IRG4BC20UD-STRL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)13 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)170 ns
Gate emitter threshold voltage maximum6 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)60 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)320 ns
Nominal on time (ton)55 ns
Base Number Matches1
PD- 94077
IRG4BC20UD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast: Optimized for high operating frequencies
8-40 kHz in hard switching, >200kHz in resonant
mode
• Generation 4 IGBT design provides tighter para-
meter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard D
2
Pak package
C
UltraFast CoPack IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.85V
@V
GE
= 15V, I
C
= 6.5A
N-channel
Benefits
• Generation 4 IGBTs offers highest efficiencies
available
• Optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
D
2
Pak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current

Clamped Inductive Load Current
‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
13
6.5
52
52
7.0
52
± 20
60
24
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.5
–––
1.44
Max.
2.1
–––
40
–––
Units
°C/W
g (oz)
www.irf.com
1
1/12/01

IRG4BC20UD-STRL Related Products

IRG4BC20UD-STRL
Description igbt 600v 13a 60w d2pak
Is it Rohs certified? incompatible
Maker International Rectifier ( Infineon )
Parts packaging code D2PAK
package instruction SMALL OUTLINE, R-PSSO-G2
Contacts 3
Reach Compliance Code compliant
Shell connection COLLECTOR
Maximum collector current (IC) 13 A
Collector-emitter maximum voltage 600 V
Configuration SINGLE WITH BUILT-IN DIODE
Maximum landing time (tf) 170 ns
Gate emitter threshold voltage maximum 6 V
Gate-emitter maximum voltage 20 V
JESD-30 code R-PSSO-G2
JESD-609 code e0
Humidity sensitivity level 1
Number of components 1
Number of terminals 2
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 225
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 60 W
Certification status Not Qualified
surface mount YES
Terminal surface Tin/Lead (Sn/Pb)
Terminal form GULL WING
Terminal location SINGLE
Maximum time at peak reflow temperature 30
transistor applications POWER CONTROL
Transistor component materials SILICON
Nominal off time (toff) 320 ns
Nominal on time (ton) 55 ns
Base Number Matches 1
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