DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAV170
Low-leakage double diode
Product data sheet
Supersedes data of 1999 May 11
2003 Mar 25
NXP Semiconductors
Product data sheet
Low-leakage double diode
FEATURES
•
Plastic SMD package
•
Low leakage current: typ. 3 pA
•
Switching time: typ. 0.8
µs
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 85 V
•
Repetitive peak forward current:
max. 500 mA.
APPLICATION
•
Low-leakage current applications in
surface mounted circuits.
MARKING
3
handbook, 4 columns
BAV170
PINNING
PIN
1
2
3
DESCRIPTION
anode
anode
common cathode
DESCRIPTION
Epitaxial, medium-speed switching,
double diode in a small SOT23 plastic
SMD package. The diodes are in
common cathode configuration.
2
1
2
1
TYPE NUMBER
BAV170
Note
MARKING
CODE
(1)
JX*
3
Top view
MAM108
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W : Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
2003 Mar 25
2
NXP Semiconductors
Product data sheet
Low-leakage double diode
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
RRM
V
R
I
F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
single diode loaded; note 1;
see Fig.2
double diode loaded; note 1;
see Fig.2
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
P
tot
T
stg
T
j
Note
1. Device mounted on a FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
see Fig.5
V
R
= 75 V
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at
I
R
= 1 mA; see Fig.7
0.003
3
2
0.8
5
80
−
3
−
−
−
−
900
PARAMETER
CONDITIONS
TYP.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
4
1
0.5
−
−
−
−
−
85
75
PARAMETER
CONDITIONS
MIN.
BAV170
MAX.
UNIT
V
V
mA
mA
mA
215
125
500
A
A
A
mW
°C
°C
250
+150
150
MAX.
UNIT
mV
mV
mV
mV
nA
nA
pF
µs
1 000
1100
1 250
2003 Mar 25
3
NXP Semiconductors
Product data sheet
Low-leakage double diode
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a FR4 printed-circuit board.
GRAPHICAL DATA
MBG521
BAV170
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
360
500
UNIT
K/W
K/W
handbook, halfpage
300
handbook, halfpage
300
MLB752 - 1
IF
(mA)
200
(1)
IF
(mA)
200
(1)
(2)
(3)
100
(2)
100
0
0
100
Tamb (
o
C)
0
200
0
0.4
0.8
1.2
V F (V)
1.6
Device mounted on a FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage; per diode.
2003 Mar 25
4
NXP Semiconductors
Product data sheet
Low-leakage double diode
BAV170
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
10
10
2
10
3
tp (µs)
10
4
Based on square wave currents; T
j
= 25
°C
prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration per diode.
10
2
handbook, halfpage
IR
(nA)
MLB754
handbook, halfpage
2
MBG526
10
(1)
Cd
(pF)
1
1
10
1
10
2
(2)
10
3
0
0
50
0
5
10
15
100
150
T j (
o
C)
200
VR (V)
20
V
R
= 75 V.
(1) Maximum values.
(2) Typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature; per diode.
Fig.6
Diode capacitance as a function of reverse
voltage; per diode; typical values.
2003 Mar 25
5
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