PD - 94754
AUTOMOTIVE MOSFET
IRFR120Z
IRFU120Z
HEXFET
®
Power MOSFET
D
Features
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 100V
G
S
R
DS(on)
= 190mΩ
I
D
= 8.7A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRFR120Z
I-Pak
IRFU120Z
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
DM
Max.
8.7
6.1
35
35
Units
A
W
W/°C
V
mJ
A
mJ
P
D
@T
C
= 25°C Power Dissipation
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
h
Avalanche Current
Ã
Repetitive Avalanche Energy
g
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
d
0.23
± 20
18
20
See Fig.12a, 12b, 15, 16
-55 to + 175
°C
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
y
y
Typ.
Max.
4.28
40
110
Units
°C/W
i
–––
–––
–––
HEXFET
®
is a registered trademark of International Rectifier.
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1
10/3/03
IRFR/U120Z
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
100
–––
–––
2.0
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.084
150
–––
–––
–––
–––
–––
–––
6.9
1.6
3.1
8.3
26
27
23
4.5
7.5
310
41
24
150
26
57
–––
–––
190
4.0
–––
20
250
200
-200
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 5.2A
V V
DS
= V
GS
, I
D
= 250µA
S V
DS
= 25V, I
D
= 5.2A
µA V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
V
GS
= -20V
I
D
= 5.2A
nC V
DS
= 80V
V
GS
= 10V
V
DD
= 50V
I
D
= 5.2A
ns R
G
= 53
Ω
V
GS
= 10V
D
Between lead,
e
e
e
nH
6mm (0.25in.)
from package
G
pF
S
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
24
23
8.7
A
35
1.3
36
35
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 5.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 5.2A, V
DD
= 50V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFR/U120Z
100
TOP
V
GS
100
TOP
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
10
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
V
GS
1
4.5V
1
0.1
4.5V
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 175°C
0.1
0.1
0
0.01
0.1
0
1
10
100
100
1
10
100
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.0
12
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
10
8
6
T J = 175°C
10.0
T J = 175°C
T J = 25°C
1.0
T J = 25°C
VDS = 25V
60µs PULSE WIDTH
4
2
0
0
2
4
6
8
ID, Drain-to-Source Current (A)
0.1
4.0
5.0
6.0
7.0
8.0
VDS = 10V
380µs PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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3
IRFR/U120Z
500
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
ID= 5.2A
VGS, Gate-to-Source Voltage (V)
400
16
C, Capacitance (pF)
VDS= 80V
VDS= 50V
VDS= 20V
Ciss
300
12
200
8
100
4
FOR TEST CIRCUIT
SEE FIGURE 13
Coss
Crss
0
1
10
100
0
0
2
4
6
8
10
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10.0
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
1msec
10msec
100
1000
1.0
T J = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
VSD, Source-toDrain Voltage (V)
0.1
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRFR/U120Z
10
3.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
8
ID = 5.2A
VGS = 10V
2.5
ID , Drain Current (A)
6
2.0
4
1.5
2
1.0
0
25
50
75
100
125
150
175
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20
0.10
0.05
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
Ri (°C/W)
τi
(sec)
0.33747 0.000053
1.793
2.150
0.000125
0.000474
0.1
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
1
τ
2
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.01
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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