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AOT9N40L

Description
mosfet N-CH 400v 8A to220
Categorysemiconductor    Discrete semiconductor   
File Size249KB,5 Pages
ManufacturerAll Sensors
Environmental Compliance  
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AOT9N40L Overview

mosfet N-CH 400v 8A to220

AOT9N40L Parametric

Parameter NameAttribute value
Datasheets
AOT9N40
Product Photos
TO-220AB
Standard Package50
CategoryDiscrete Semiconductor Products
FamilyFETs - Single
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)400V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs800 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) @ Vgs16nC @ 10V
Input Capacitance (Ciss) @ Vds760pF @ 25V
Power - Max132W
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Dynamic CatalogN-Channel Standard FETs
Other Names785-1417-5AOT9N40
AOT9N40
400V,8A N-Channel MOSFET
General Description
The AOT9N40 is fabricated using an advanced high
voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC
applications.By providing low R
DS(on)
, C
iss
and C
rss
along
with guaranteed avalanche capability this parts can be
adopted quickly into new and existing offline power supply
designs.These parts are ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
500V@150℃
8A
< 0.8Ω
100% UIS Tested
100% R
g
Tested
For Halogen Free add "L" suffix to part number:
AOT9N40L
Top View
TO-220
D
G
G
D
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOT9N40
400
±30
8
5
22
3.2
150
300
5
132
1
-55 to 150
300
AOT9N40
65
0.5
0.95
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ C
°C
°C
Units
°C/W
°C/W
°C/W
o
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
R
θJC
Repetitive avalanche energy
Single pulsed avalanche energy
Peak diode recovery dv/dt
T
C
=25°C
B
o
Power Dissipation
Derate above 25 C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
A,D
Maximum Junction-to-Ambient
Maximum Case-to-sink
Maximum Junction-to-Case
A
Rev 0: Dec 2010
www.aosmd.com
Page 1 of 5

AOT9N40L Related Products

AOT9N40L
Description mosfet N-CH 400v 8A to220
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Packaging Tube
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 400V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Rds On (Max) @ Id, Vgs 800 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) @ Vds 760pF @ 25V
Power - Max 132W
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Dynamic Catalog N-Channel Standard FETs
Other Names 785-1417-5AOT9N40
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