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CK100B

Description
NPN SILICON PLANAR TRANSISTORS
File Size45KB,3 Pages
ManufacturerCDIL
Websitehttp://www.cdilsemi.com
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CK100B Overview

NPN SILICON PLANAR TRANSISTORS

Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
IS/ISO 9002
Lic# QSC/L- 000019.2
NPN SILICON PLANAR TRANSISTORS
CL 100, A, B
CK 100, A, B
TO-39
Metal Can Package
CL100 And CK 100 Are Medium Power Transistors Suitable For Awide Range
Of Medium Voltage And Current Amplifier Applications.
Complementary CK100, A, B
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
V
CER
Collector -Emitter Voltage
V
CBO
Collector -Base Voltage
Emitter Base Voltage
Collector Current-Continuous
Power Dissipation @ Ta=25ºC
Derate above 25ºC
Total device dissipation @ Tc=25ºC
Derate above 25ºC
Operating And Storage Junction
Temperature Range
V
EBO
I
CM
P
D
P
D
T
j
, T
stg
VALUE
50
60
5
1
800
5.33
3
20
-55 to +175
UNITS
V
V
V
A
mW
mW /°C
W
mW /°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Breakdown Voltage
BV
CER
* I
C
=10mA, I
B
=0
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Leakage Current
Emitter Leakage Current
DC Current Gain
Base Emitter On Voltage
Collector Emitter (Sat) Voltage
CLASSIFICATION
HFE
BV
CBO
BV
EBO
I
CBO
I
EBO
h
FE
*
I
C
=100µA, I
E
=0
I
E
=100µA, I
C
=0
V
CB
=40V, I
E
=0
V
EB
=4V, I
E
=0
I
C
=150mA,V
CE
=10V
MIN
50
60
5
TYP
MAX
UNIT
V
V
V
50
1
40
300
0.9
0.6
nA
µA
V
V
V
BE
(on)* V
CE
=1V, I
C
=150mA,
V
CE
(sat)* I
C
=150mA,I
B
=15mA
A
40-120
B
100-300
*Pulse Condition : PW <300us, Duty Cycle < 2%
Continental Device India Limited
Data Sheet
Page 1 of 3

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