MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
Features
High Power Handling
Low Loss / Low Distortion
Voltage Ratings up to 1000 Volts
Passivated Chip for Low Leakage Current
Low Theta (θ) Due to Full Face Chip Bonding
Leadless Low Inductance MELF Packages
Various Package Options
Available as Chips
Fully RoHS Compliant
Non-Magnetic Packages Available for MRI
Package Styles
401 & 402
1072 & 1091
Description
The MELF and HIPAX PIN diode series are
designed for usage in switch and attenuator
applications requiring high power handling and low
distortion. These diodes incorporate a fully
passivated PIN diode chip resulting in an extremely
low reverse bias leakage current. The
semiconductor technology utilized in the MELF and
HIPAX families draws on MACOM ’s substantial
experience in PIN diode design and wafer
fabrication. The result is a device which has a thick
I-region and long carrier lifetime while maintaining
low series resistance and capacitance values. The
chips of the MELF and HIPAX PIN diodes are
enclosed in a rugged ceramic package and is full
face bonded to metal pins on both the anode and
cathode. The result is a low loss PIN diode with low
thermal resistance due to symmetrical thermal
paths. The parts are offered in either magnetic or
non-magnetic, HIPAX (axial leaded) or MELF (Metal
Electrode Leadless Faced) surface mount packages
for MRI applications. The MELF is a rectangular
SMQ, package which is designed for high volume
tape and reel assembly. This easy to use package
design makes automatic pick and place, indexing
and assembly, extremely easy. The parallel flat sur-
faces are suitable for most key jaw or vacuum pick-
up techniques. All of the solderable surfaces are tin
plated and compatible with industry standard reflow
and vapor phase soldering processes. See Applica-
tion Note
M538
for a typical solder reflow profile.
Many of MACOM’s HIPAX PIN diodes are also
available as chips. Please consult the “Silicon PIN
Chip Datasheet” for availability and specifications.
1
Applications
HIPAX PIN diodes are designed for use in a wide
variety of switch and attenuator applications from
HF through UHF frequencies and at power levels
above 1 kW, CW. The internal chip as well as each
diode assembly has been comprehensively tested
and characterized to ensure predictable and
repeatable performance.
Design Recommendations
Low Distortion Attenuators
MA4P4301B
Surface Mount Switches
MA4P7101F
Cellular Radio Antenna Switches
MA4P1200, MA4P1250
Absolute Maximum Ratings
T
A
= +25°C
(Unless Otherwise Noted)
1
Parameter
DC Reverse Voltage (V
R
)
Operating Chip Junction
Temperature
Storage Temperature
Installation Temperature
ESD
Absolute Maximum
(See Tables)
-55°C to +175°C
-55°C to +200°C
+280°C for 30 Seconds
Class 1A, HBM
Notes
1. Operation of this device above any one of these
parameters may cause permanent damage.
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
MA4P MELF & HIPAX Series
High Power PIN Diodes
V16
Typical Performance Curves @ T
A
= +25°C
MA4P1200 Series
Series Resistance @ 100 MHz vs. Forward Current
Capacitance vs. Frequency & Reverse Bias
Series Resistance
Capacitance
Ω
pF
MHz
Frequency
Forward Current
Parallel Resistance vs. Frequency & Reverse Bias
Heatsink Temperature vs. Max. Power Dissipation
Maximum Power Dissipation
Parallel Resistance
Ω
MHz
Frequency
Watts
°C
Heatsink Temperature
3
MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit
www.macom.com
for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
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